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74LVC00ADR2G

Onsemi

74LVC00ADR2G by Onsemi

74LVC00ADR2G by Onsemi is a CMOS Logic Gates IC with 4 functions and 2 inputs. It operates at a supply voltage range of 1.2V to 3.6V, offering a propagation delay of 9.7ns. Ideal for automotive applications due to its small outline package and wide temperature range from -40 °C to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,591 parts In-Stock

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Digiode

USA . 564 parts In-Stock

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Native Components

USA . 859 parts In-Stock

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$1.437

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Northwest PG Solutions

USA . 936 parts In-Stock

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AZTECH Wire

Italy . 1,120 parts In-Stock

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Problanco Electronics

Mexico . 8,200 parts In-Stock

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SupplyDigital Components

Austria . 7,795 parts In-Stock

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TANS Electronics

Latvia . 4,506 parts In-Stock

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Kulean Microsystems

USA . 3,399 parts In-Stock

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UHIMA Technologies

Türkiye . 589 parts In-Stock

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Corohmni

South Africa . 414 parts In-Stock

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Microchip USA

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Corphita

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Overview

Unlock the power of advanced logic gates with the 74LVC00ADR2G by Onsemi. Manufactured with precision and quality, this product offers unmatched reliability and performance. Ideal for a wide range of applications, this logic gate is designed to meet the demanding requirements of today's technology-driven world. Experience the value and benefits of this product firsthand and take your projects to the next level with ease.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Surface Mount: YES

Being surface mountable, the product is easy to install and saves space on the circuit board.

No. of Functions: 4

With 4 functions in one device, it reduces the need for multiple components, simplifying circuit design and saving board space.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a standard voltage level of 3.3V, making it compatible with a wide range of systems and power sources.

Propagation Delay (tpd): 9.7 ns

The low propagation delay of 9.7 ns ensures fast signal processing and reduces latency in the circuit.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications, this product can withstand a wide range of temperature fluctuations, ensuring reliable performance in harsh environments.

Technology: CMOS

Utilizing CMOS technology, the product offers low power consumption, high speed, and noise immunity, making it efficient and reliable.

Technical Specifications

Logic Gates 74LVC00ADR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Additional Features:

OPERATING SUPPLY VOLTAGE 1.65 TO 3.6 V

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

9.7 ns

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

74LVC00ADR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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