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74HC132DTR2G

Onsemi

74HC132DTR2G by Onsemi

74HC132DTR2G by Onsemi is a CMOS Logic Gates IC with 4 functions and 2 inputs. It has a propagation delay of 38ns at Vsup of 4.5V, making it suitable for military-grade applications requiring fast response times in a small outline package.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10 parts In-Stock

1+ parts

-

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$0.132

1k+ parts

$0.110

10k+ parts

$0.098

10

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$0.132

$0.110

$0.098

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Digiode

USA . 961 parts In-Stock

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$0.103

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961

$0.103

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Chip Stock

USA . 163,930 parts In-Stock

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Vyrian

USA . 4,125 parts In-Stock

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Diverse Electronics

Canada . 707 parts In-Stock

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Prism Electronics

USA . 41 parts In-Stock

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LWI Electronics Inc

India . 35 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 10 parts In-Stock

1+ parts

$0.092

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10

$0.092

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Corphita

USA . 910 parts In-Stock

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$0.097

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910

$0.097

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Corohmni

South Africa . 294 parts In-Stock

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$0.108

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AZTECH Wire

Italy . 1,136 parts In-Stock

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$9.310

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Microchip USA

USA . 7,057 parts In-Stock

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TANS Electronics

Latvia . 6,711 parts In-Stock

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Kulean Microsystems

USA . 6,303 parts In-Stock

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Northwest PG Solutions

USA . 1,044 parts In-Stock

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UHIMA Technologies

Türkiye . 625 parts In-Stock

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Problanco Electronics

Mexico . 537 parts In-Stock

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SupplyDigital Components

Austria . 521 parts In-Stock

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Native Components

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Overview

Looking to enhance your electronic projects with reliable and high-quality logic gates? Look no further than the 74HC132DTR2G by Onsemi! With a reputable manufacturer like Onsemi, you can trust in the superior performance and durability of this product. Ideal for a wide range of applications, this logic gate offers customers exceptional value with its fast propagation delay, low power consumption, and versatile package style. Say goodbye to technical hiccups and hello to seamless functionality with the 74HC132DTR2G from Onsemi!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable or rugged applications.

Propagation Delay At Nominal Supply: 38 ns

The low propagation delay ensures fast signal processing and high-speed operation.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto PCBs, saving space and facilitating automated assembly processes.

No. of Functions: 4

Having multiple functions in a single component simplifies circuit design and reduces the number of components needed for a given application.

Nominal Supply Voltage / Vsup (V): 4.5

Operating at a nominal supply voltage of 4.5V ensures compatibility with common power sources and offers a balance between power consumption and performance.

Technology: CMOS

CMOS technology results in low power consumption, high noise immunity, and compatibility with a wide range of input signal levels, making it an efficient choice for digital logic circuits.

Technical Specifications

Logic Gates 74HC132DTR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

38 ns

Propagation Delay (tpd):

190 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

4.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

74HC132DTR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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