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2N5064G

Onsemi

2N5064G by Onsemi

2N5064G by Onsemi is a single SCR with max. DC gate trigger current of 0.2 mA and non-repetitive peak on-state current of 10 A. It is used in applications requiring a max on-state current of 0.51 A, such as power control circuits for industrial equipment or lighting systems.

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8

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Vyrian

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Digiode

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ComSIT Distribution GmbH

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Inventory MP

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Bristol Electronics

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Diverse Electronics

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Prism Electronics

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Benley Electronics

USA . 420 parts In-Stock

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AZTECH Wire

Italy . 134 parts In-Stock

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Native Components

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$49.498

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Northwest PG Solutions

USA . 176 parts In-Stock

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Component Stockers USA

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Perfect Parts

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Kulean Microsystems

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A-Z Elektronik GmbH

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TANS Electronics

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SupplyDigital Components

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Glotronic Ltd.

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Overview

Looking for a reliable Silicon Controlled Rectifier (SCR) for your next project? Look no further than the 2N5064G by Onsemi! With a reputation for high-quality components, Onsemi ensures top-notch performance and durability. Whether you're working on industrial equipment, power supplies, or motor control applications, this SCR has got you covered. Say goodbye to frequent replacements with its maximum on-state current of 0.51 A and non-repetitive peak on-state current of 10 A. Invest in the 2N5064G today and experience the value and benefits it brings to your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and resistant to heat and moisture, ensuring a long lifespan for the SCR.

Maximum DC Gate Trigger Current: 0.2 mA

The low gate trigger current ensures efficient operation and minimal power consumption.

Configuration: SINGLE

SINGLE configuration simplifies installation and wiring, making it easier to use.

Non Repetitive Peak On-state Current: 10 A

With a high non repetitive peak on-state current, this SCR is suitable for high-power applications.

Package Shape: ROUND

The round shape allows for easy mounting and installation in various applications.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure connection and easy soldering, ensuring reliable performance.

Maximum On-state Current: 0.51 A

The high maximum on-state current makes this SCR suitable for medium-power applications.

Repetitive Peak Reverse Voltage: 200 V

The repetitive peak reverse voltage rating ensures protection against reverse voltage spikes.

No. of Terminals: 3

Having 3 terminals allows for easy integration into circuits and systems.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, ideal for applications with limited space.

Maximum Operating Temperature: 110 °C

The high maximum operating temperature allows for reliable performance in a wide range of environments.

Trigger Device Type: SCR

Being an SCR, this device offers high reliability and performance, suitable for a variety of applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature makes this SCR suitable for use in cold environments.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides excellent conductivity and corrosion resistance for long-lasting performance.

Terminal Position: BOTTOM

The bottom terminal position makes it easy to mount and connect this SCR in various applications.

Maximum RMS On-state Current: 0.8 A

The high maximum RMS on-state current makes this SCR suitable for medium-power applications.

Maximum DC Gate Trigger Voltage: 1.2 V

The low gate trigger voltage ensures efficient operation and minimal power consumption.

Repetitive Peak Off-state Voltage: 200 V

The repetitive peak off-state voltage rating ensures protection against voltage spikes.

Maximum Holding Current: 10 mA

The high maximum holding current ensures stable operation in various applications.

Nominal Circuit Commutated Turn-off Time: 30 us

The fast turn-off time ensures quick response and efficiency in switching applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures reliable soldering and durability during assembly.

Technical Specifications

Silicon Controlled Rectifiers (SCR) 2N5064G attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from Onsemi

Specs

Additional Features:

SENSITIVE GATE

Nominal Circuit Commutated Turn-off Time:

30 us

Configuration:

Maximum DC Gate Trigger Current:

.2 mA

Maximum DC Gate Trigger Voltage:

1.2 V

Maximum Holding Current:

10 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

Non Repetitive Peak On-state Current:

10 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.51 A

Maximum Operating Temperature:

110 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

200 V

Repetitive Peak Reverse Voltage:

200 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

Trigger Device Type:

SCR

Trade Compliance

2N5064G Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

NSN

5961-01-029-6625, 5961010296625

NIIN

010296625

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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