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2N3860

Onsemi

2N3860 by Onsemi

The Onsemi 2N3860 is a NPN BJT transistor with max VCEsat of 0.125V, hFE of 150, and fT of 90MHz. Ideal for amplifier applications due to its low power dissipation (0.62W) and max collector-emitter voltage of 30V. Its plastic/epoxy package with through-hole terminals makes it suitable for various electronic circuits.

Median Price

$2.000

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Ace Electronics

USA . 33 parts In-Stock

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ES Components

USA . 7,616 parts In-Stock

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Anansix

USA . 2,858 parts In-Stock

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Digiode

USA . 2,795 parts In-Stock

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DF Sales Co.

USA . 1,995 parts In-Stock

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DF Sales Co.

USA . 1,995 parts In-Stock

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Bristol Electronics

USA . 360 parts In-Stock

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Vyrian

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Resion

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LittleDiode

UK . 7 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 2 parts In-Stock

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Corohmni

South Africa . 181 parts In-Stock

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SupplyDigital Components

Austria . 7,052 parts In-Stock

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TANS Electronics

Latvia . 6,779 parts In-Stock

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Problanco Electronics

Mexico . 5,793 parts In-Stock

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Authorized Procurement Solutions

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Supply Digital

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Corphita

USA . 2,308 parts In-Stock

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Northwest PG Solutions

USA . 319 parts In-Stock

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Kulean Microsystems

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Native Components

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UHIMA Technologies

Türkiye . 62 parts In-Stock

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Overview

Unlock the power of innovation with the 2N3860 by Onsemi. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor (BJT) is designed to amplify with unrivaled efficiency and clarity. From amplifiers to electronic gadgets, this NPN transistor offers a seamless performance that exceeds expectations. With a maximum VCEsat of 0.125V and a minimum DC Current Gain of 150, this product ensures maximum power dissipation without compromising on quality. Elevate your projects with the 2N3860 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides high level of protection and durability, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

Commonly used in amplification circuits and provides a high level of efficiency.

Configuration: SINGLE

Simplified design and ease of use for circuit integration.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in such circuits.

Maximum VCEsat: 0.125 V

Low voltage saturation ensures minimal power loss and efficient operation.

Package Shape: ROUND

Compact and space-saving design for easy integration into circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure mounting onto circuit boards.

No. of Terminals: 3

Simplified connection scheme for ease of use in circuit design.

Maximum Power Dissipation (Abs): 0.62 W

Capability to handle moderate power levels for reliable performance.

Package Style (Meter): CYLINDRICAL

Durable and reliable package style for long-term use.

Minimum DC Current Gain (hFE): 150

Ensures amplification is performed accurately and efficiently.

Maximum Operating Temperature: 150 °C

Can operate efficiently in high-temperature environments.

Maximum Collector-Base Capacitance: 4 pF

Low capacitance for minimal signal distortion in high-frequency applications.

Maximum Collector-Emitter Voltage: 30 V

Sufficient voltage rating for various circuit applications.

Transistor Element Material: SILICON

Reliable and commonly used material for transistor construction.

Maximum Collector Current (IC): 0.1 A

Able to handle moderate current levels for various applications.

Terminal Finish: TIN LEAD

Ensures secure electrical connections with low resistance.

Terminal Position: BOTTOM

Facilitates easy mounting and soldering onto circuit boards.

Nominal Transition Frequency (fT): 90 MHz

High transition frequency for reliable performance in high-frequency circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3860 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4 pF

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

150

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.125 V

Trade Compliance

2N3860 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-490-0234, 5961004900234

NIIN

004900234

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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