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1PMT5933BT1

Onsemi

1PMT5933BT1 by Onsemi

1PMT5933BT1 by Onsemi is a Zener diode with a nominal reference voltage of 22V and max power dissipation of 0.5W. It operates at a max temperature of 150 °C, has a working test current of 17mA, and features a unidirectional polarity. This diode is commonly used in applications requiring precise voltage regulation in electronic circuits.

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USA . 1,126 parts In-Stock

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TANS Electronics

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Overview

Discover the ultimate solution for your voltage regulation needs with the 1PMT5933BT1 Zener Diode by Onsemi. Known for their top-quality products, Onsemi delivers reliable and efficient components that cater to a wide range of applications. This Zener diode, with its high performance and maximum voltage tolerance of 5%, ensures precision in regulating voltage levels. Its small outline package and single terminal position make installation a breeze, while its unidirectional polarity guarantees seamless operation. Trust Onsemi's expertise and invest in the 1PMT5933BT1 for unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides excellent durability and protection for the diode, making it suitable for a wide range of applications.

Working Test Current: 17 mA

The high working test current of 17 mA ensures reliable and stable performance of the Zener diode in various circuit scenarios.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this Zener diode can withstand high temperatures without compromising its functionality.

Nominal Reference Voltage: 22 V

The nominal reference voltage of 22 V makes this Zener diode ideal for applications that require precise voltage regulation.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation of 0.5 W ensures that the Zener diode can handle a significant amount of power without failure.

Technical Specifications

Zener Diodes 1PMT5933BT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

17.5 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

22 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

17 mA

Trade Compliance

1PMT5933BT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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