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1PMT5927BT1

Onsemi

1PMT5927BT1 by Onsemi

1PMT5927BT1 by Onsemi is a Zener diode with a nominal reference voltage of 12V and max power dissipation of 0.5W. It operates at a max temperature of 150 °C, has a working test current of 31.2mA, and features a small outline package style for surface mount applications.

Median Price

$0.145

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,009 parts In-Stock

1+ parts

-

100+ parts

$0.145

1k+ parts

$0.121

10k+ parts

$0.107

2,009

-

$0.145

$0.121

$0.107

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,721 parts In-Stock

1+ parts

$0.113

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-

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1,721

$0.113

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Vyrian

USA . 2,930 parts In-Stock

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2,930

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 312 parts In-Stock

1+ parts

$0.098

100+ parts

-

1k+ parts

-

10k+ parts

$0.094

312

$0.098

-

-

$0.094

Corphita

USA . 1,475 parts In-Stock

1+ parts

$0.107

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-

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1,475

$0.107

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Northwest PG Solutions

USA . 1,661 parts In-Stock

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$0.108

100+ parts

-

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$0.095

1,661

$0.108

-

-

$0.095

Corohmni

South Africa . 82 parts In-Stock

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$0.119

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82

$0.119

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Component Stockers USA

USA . 2,671 parts In-Stock

1+ parts

$0.120

100+ parts

$0.110

1k+ parts

$0.100

10k+ parts

-

2,671

$0.120

$0.110

$0.100

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.162

100+ parts

$0.147

1k+ parts

$0.133

10k+ parts

-

100

$0.162

$0.147

$0.133

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AZTECH Wire

Italy . 902 parts In-Stock

1+ parts

$15.820

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902

$15.820

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Kulean Microsystems

USA . 7,923 parts In-Stock

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7,923

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SupplyDigital Components

Austria . 6,967 parts In-Stock

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6,967

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Problanco Electronics

Mexico . 6,783 parts In-Stock

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TANS Electronics

Latvia . 437 parts In-Stock

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437

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UHIMA Technologies

Türkiye . 382 parts In-Stock

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382

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Overview

Discover the powerful performance and reliability of the 1PMT5927BT1 Zener Diode by Onsemi. Designed with precision and expertise, this small outline package boasts a nominal reference voltage of 12V and a maximum power dissipation of 0.5W. Ideal for a wide range of applications, this unidirectional diode offers customers a superior quality component that delivers consistent results and peace of mind. Experience the value and benefits of Onsemi's cutting-edge technology with the 1PMT5927BT1 Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components, making this zener diode a reliable choice for long-term use.

Working Test Current: 31.2 mA

The high working test current capability of 31.2 mA indicates the diode's ability to handle heavy loads without getting damaged, ensuring stable performance in demanding applications.

Maximum Voltage Tolerance: 5 %

With a maximum voltage tolerance of 5%, this zener diode provides precise voltage regulation, making it suitable for applications requiring accurate voltage control.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C allows this zener diode to function effectively in elevated temperature environments without overheating.

Maximum Power Dissipation: 0.5 W

The maximum power dissipation of 0.5W ensures that the zener diode can handle power spikes and surges, making it a reliable choice for applications with varying power loads.

Nominal Reference Voltage: 12 V

The nominal reference voltage of 12V allows for precise voltage regulation, making this zener diode suitable for applications requiring a stable voltage output.

Technical Specifications

Zener Diodes 1PMT5927BT1 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

CATHODE

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

6.5 ohm

JEDEC-95 Code:

DO-216AA

JESD-30 Code:

S-PSSO-G1

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Nominal Reference Voltage:

12 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

31.2 mA

Trade Compliance

1PMT5927BT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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