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PMPB48EP,115

NXP Semiconductors

PMPB48EP,115 by NXP Semiconductors

PMPB48EP,115 by NXP Semiconductors is a P-channel MOSFET designed for enhancement mode applications. It supports a max drain current of 4.7 A and power dissipation of 1.7 W, operating up to 150 °C. Ideal for surface mount configurations in various electronic circuits.

Median Price

$0.293

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 65 parts In-Stock

1+ parts

$0.750

100+ parts

$0.289

1k+ parts

$0.178

10k+ parts

$0.139

65

$0.750

$0.289

$0.178

$0.139

Rochester

USA . 559,870 parts In-Stock

1+ parts

-

100+ parts

$0.293

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$0.243

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$0.217

559,870

-

$0.293

$0.243

$0.217

Verical

USA . 559,870 parts In-Stock

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$0.271

559,870

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$0.271

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Digiode

USA . 2,926 parts In-Stock

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$0.100

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2,926

$0.100

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Chip Stock

USA . 65,000 parts In-Stock

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Vyrian

USA . 4,089 parts In-Stock

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Anansix

USA . 1,622 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,492 parts In-Stock

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$0.094

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$0.094

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AZTECH Wire

Italy . 13,471 parts In-Stock

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$0.390

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13,471

$0.390

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Microchip USA

USA . 4,082 parts In-Stock

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$0.935

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4,082

$0.935

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QUARKTWIN TECHNOLOGY LTD

USA . 17,102 parts In-Stock

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Eastek

USA . 12,000 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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UNI Independent Distributors

Spain . 3,524 parts In-Stock

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Supply Digital

USA . 2,474 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Overview

Elevate your projects with the PMPB48EP,115 from NXP Semiconductors, a trusted leader in innovation. This P-channel enhancement mode transistor offers exceptional reliability and performance, making it ideal for various applications, from power management to signal processing. Experience the benefits of superior quality, efficient design, and robust thermal characteristics, ensuring long-lasting durability. Choose NXP for unparalleled value in every circuit!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-Channel configuration allows for easier integration in high-side switching applications, providing flexibility in circuit design.

Configuration: SINGLE

Single configuration simplifies the circuit design, making it more efficient and easier to implement in standard applications.

Surface Mount: YES

Surface mount capability enables compact circuit designs, suitable for modern electronic devices with limited space.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation ensures lower on-resistance and higher efficiency in switching applications, improving overall performance.

Maximum Drain Current (Abs): 4.7 A

A high maximum drain current of 4.7 A provides robustness, allowing the transistor to handle significant loads and making it suitable for various power applications.

Maximum Power Dissipation (Abs): 1.7 W

With a maximum power dissipation of 1.7 W, this transistor can manage thermal stress effectively, ensuring reliable operation in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers fast switching speeds and high input impedance, which enhances performance in digital and analog applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows the transistor to function effectively in warm environments, enhancing durability and reliability.

Terminal Finish: TIN

The tin terminal finish ensures good solderability and corrosion resistance, contributing to the longevity and stability of connections in printed circuit boards.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow temperature time of 30 seconds indicates durability during soldering processes, minimizing damage during assembly.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C ensures compatibility with high-temperature soldering processes, allowing for versatile applications in various industries.

Technical Specifications

Other Function Transistors PMPB48EP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

4.7 A

Maximum Drain Current (ID):

4.7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMPB48EP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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