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PMPB29XPE,115

NXP Semiconductors

PMPB29XPE,115 by NXP Semiconductors

PMPB29XPE,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for surface mount applications. It supports a max drain current of 5 A and power dissipation of 3.5 W, operating up to 150 °C. Ideal for efficient switching in various electronic circuits.

Median Price

$0.292

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 2,989 parts In-Stock

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$0.540

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$0.268

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$0.166

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$0.124

2,989

$0.540

$0.268

$0.166

$0.124

DigiKey

USA . 480 parts In-Stock

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$0.670

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$0.268

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480

$0.670

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Rochester

USA . 4,362 parts In-Stock

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$0.292

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$0.242

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$0.216

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Verical

USA . 3,000 parts In-Stock

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$0.270

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Farnell

UK . 1,362 parts In-Stock

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$0.097

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Digiode

USA . 3,459 parts In-Stock

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$0.110

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Chip Stock

USA . 101,000 parts In-Stock

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Vyrian

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Anansix

USA . 947 parts In-Stock

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Corphita

USA . 4,781 parts In-Stock

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$0.104

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AZTECH Wire

Italy . 11,429 parts In-Stock

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$0.340

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Advanced Electronics

New Zealand . 1,371 parts In-Stock

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$0.805

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$0.797

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$0.765

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Perfect Parts

USA . 10,080 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,362 parts In-Stock

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$0.131

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UNI Independent Distributors

Spain . 3,507 parts In-Stock

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Supply Digital

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Overview

Unlock the potential of your designs with the PMPB29XPE,115 from NXP Semiconductors. Renowned for innovation and reliability, NXP delivers superior quality in every component, ensuring optimal performance in various applications like power management and signal switching. This P-channel enhancement mode transistor not only enhances efficiency but also supports high-temperature environments, offering you exceptional durability and peace of mind in your projects. Experience the advantage of excellence!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

The P-CHANNEL configuration allows for easier integration into circuits that require high side switching, offering flexibility in design.

Configuration: SINGLE

A single configuration simplifies design complexities and reduces the footprint on the PCB, making it suitable for compact applications.

Surface Mount: YES

Surface mount technology allows for automated assembly and improved reliability, benefiting high-volume manufacturing.

Operating Mode: ENHANCEMENT MODE

Enhancement mode ensures that this transistor is off until a voltage is applied, reducing power consumption during inactive states.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current of 5 A, this transistor can handle significant loads, making it ideal for power applications.

Maximum Power Dissipation (Abs): 3.5 W

A power dissipation capability of 3.5 W indicates robust performance under load, enhancing overall reliability in demanding environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and fast switching times, contributing to efficient circuit performance.

Maximum Operating Temperature: 150 °C

Operating at a high temperature of 150 °C allows this transistor to function in harsh environments, increasing design flexibility.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections in assemblies.

Maximum Time At Peak Reflow Temperature (s): 30

A maximum reflow time of 30 seconds provides a buffer during production, reducing the risk of damage during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature processes, making it suitable for modern automated manufacturing.

Technical Specifications

Other Function Transistors PMPB29XPE,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMPB29XPE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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