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PMPB19XP,115

NXP Semiconductors

PMPB19XP,115 by NXP Semiconductors

PMPB19XP,115 by NXP Semiconductors is a P-channel MOSFET designed for efficient power management. It supports a max drain current of 7.2 A and power dissipation of 12.5 W, making it ideal for high-temperature applications up to 150 °C. This surface-mount transistor excels in enhancement mode configurations.

Median Price

$0.287

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6 parts In-Stock

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$0.700

100+ parts

$0.280

1k+ parts

$0.191

10k+ parts

$0.137

6

$0.700

$0.280

$0.191

$0.137

Rochester

USA . 200,538 parts In-Stock

1+ parts

-

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$0.310

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$0.257

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$0.229

200,538

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$0.229

Verical

USA . 119,538 parts In-Stock

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$0.287

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Chip1Stop

Japan . 75,000 parts In-Stock

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$0.135

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Arrow

USA . 69,000 parts In-Stock

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$0.114

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$0.114

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Digiode

USA . 2,317 parts In-Stock

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$0.116

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Chip Stock

USA . 105,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.181

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Vyrian

USA . 4,512 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.159

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Anansix

USA . 1,931 parts In-Stock

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Corphita

USA . 4,396 parts In-Stock

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$0.110

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AZTECH Wire

Italy . 13,442 parts In-Stock

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$0.140

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Component Stockers USA

USA . 97,609 parts In-Stock

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$0.410

100+ parts

$0.240

1k+ parts

$0.160

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$0.110

97,609

$0.410

$0.240

$0.160

$0.110

Continental Prestige Electronics

USA . 56,500 parts In-Stock

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$0.139

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QUARKTWIN TECHNOLOGY LTD

USA . 25,782 parts In-Stock

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Perfect Parts

USA . 6,720 parts In-Stock

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Microchip USA

USA . 4,289 parts In-Stock

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UNI Independent Distributors

Spain . 3,781 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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iodParts Technologies Inc.

India . 2,935 parts In-Stock

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Supply Digital

USA . 1,404 parts In-Stock

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Overview

Unlock the potential of your designs with the PMPB19XP,115 from NXP Semiconductors, a leader in innovative technology. This P-channel enhancement mode transistor excels in performance and reliability, making it ideal for diverse applications from power management to signal processing. With its robust specifications and surface mount convenience, you can trust this device to deliver efficiency and durability, ensuring your projects achieve their highest potential while enhancing overall system performance.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-channel transistors are often easier to use in low-side switching applications, making them a versatile choice for various circuit designs.

Configuration: SINGLE

A single configuration indicates simplicity in design, making it ideal for applications that do not require multiple transistors.

Surface Mount: YES

Surface mount technology allows for reduced PCB space and better thermal performance, making it suitable for compact designs.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for better control and efficiency in switching applications, providing improved signal integrity.

Maximum Drain Current (Abs): 7.2 A

With a maximum drain current of 7.2 A, this transistor is capable of handling substantial load currents, making it suitable for power applications.

Maximum Power Dissipation (Abs): 12.5 W

A power dissipation capability of 12.5 W allows this transistor to manage heat effectively, enhancing its reliability in high-power scenarios.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making it an excellent choice for battery-powered devices.

Maximum Operating Temperature: 150 °C

Operating at up to 150 °C ensures that this transistor can function in high-temperature environments, increasing its versatility in various applications.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring long-term reliability in electronic connections.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds allows for effective soldering without damaging the component, ensuring quality and performance in assembly.

Peak Reflow Temperature °C: 260

A high peak reflow temperature of 260 °C enables compatibility with a variety of soldering processes and enhances reliability in manufacturing.

Technical Specifications

Other Function Transistors PMPB19XP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

7.2 A

Maximum Drain Current (ID):

7.2 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMPB19XP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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