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PMPB33XP,115

NXP Semiconductors

PMPB33XP,115 by NXP Semiconductors

PMPB33XP,115 by NXP Semiconductors is a P-channel enhancement mode MOSFET designed for efficient power management. It supports a max drain current of 5.5 A and operates up to 150 °C, making it ideal for compact electronic applications. Its surface mount configuration ensures easy integration into various circuits.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 91 parts In-Stock

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$0.570

100+ parts

$0.224

1k+ parts

$0.150

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$0.123

91

$0.570

$0.224

$0.150

$0.123

EBV Elektronik

Germany . 471,000 parts In-Stock

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Rochester

USA . 41,272 parts In-Stock

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$0.228

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$0.189

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$0.169

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$0.169

DigiKey

USA . 41,272 parts In-Stock

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$0.280

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Verical

USA . 20,272 parts In-Stock

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$0.211

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Arrow

USA . 3,000 parts In-Stock

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$0.094

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.110

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Digiode

USA . 214 parts In-Stock

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$0.086

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Chip Stock

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Vyrian

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Anansix

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Corphita

USA . 185 parts In-Stock

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$0.081

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AZTECH Wire

Italy . 5,504 parts In-Stock

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$0.110

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Eastek

USA . 489,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,915 parts In-Stock

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Continental Prestige Electronics

USA . 24,172 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Supply Digital

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UNI Independent Distributors

Spain . 1,312 parts In-Stock

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Overview

Unlock superior performance with the PMPB33XP,115 from NXP Semiconductors, a trusted leader in semiconductor innovation. This P-channel enhancement mode transistor excels in efficiency and reliability, making it ideal for diverse applications like automotive systems and industrial controls. With its robust design and outstanding thermal management, it seamlessly supports your projects while enhancing energy savings and durability. Choose PMPB33XP,115 for quality you can count on!

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

The P-Channel configuration allows for easy integration in high-side switching applications, making it versatile for various circuit designs.

Configuration: SINGLE

A single configuration simplifies design and layout, reducing complexity in circuit design for effective performance.

Surface Mount: YES

Surface mount capability enables compact design and efficient space utilization on PCBs, ideal for modern electronics.

Operating Mode: ENHANCEMENT MODE

Enhancement mode ensures the transistor remains off when no gate voltage is applied, minimizing standby power consumption.

Maximum Drain Current (Abs) (ID): 5.5 A

With a maximum drain current of 5.5 A, this transistor can handle ample loads, making it suitable for a variety of applications.

Maximum Power Dissipation (Abs): 1.7 W

The power dissipation rating of 1.7 W allows for efficient heat management, improving reliability in operational environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOS technology provides high input impedance, low power consumption, and fast switching speed, enhancing circuit efficiency.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures reliable performance in high-temperature environments, extending product lifespan.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring robust electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

A peak reflow time of 30 seconds is optimal for soldering processes, preventing damage during assembly.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this product is compatible with standard soldering processes, facilitating easy integration.

Technical Specifications

Other Function Transistors PMPB33XP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

5.5 A

Maximum Drain Current (ID):

5.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMPB33XP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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