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PMPB27EP,115

NXP Semiconductors

PMPB27EP,115 by NXP Semiconductors

NXP Semiconductors PMPB27EP,115 is a P-CHANNEL FET with 8.8A max drain current and 1.7W power dissipation in enhancement mode. Ideal for surface mount applications, it operates up to 150°C, making it suitable for various electronic devices requiring high power efficiency.

Median Price

$0.214

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 22,667,383 parts In-Stock

1+ parts

-

100+ parts

$0.311

1k+ parts

$0.259

10k+ parts

$0.231

22,667,383

-

$0.311

$0.259

$0.231

Verical

USA . 22,407,360 parts In-Stock

1+ parts

-

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$0.288

22,407,360

-

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$0.288

Arrow

USA . 5,080 parts In-Stock

1+ parts

-

100+ parts

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$0.140

10k+ parts

$0.109

5,080

-

-

$0.140

$0.109

Chip1Stop

Japan . 3,000 parts In-Stock

1+ parts

-

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$0.137

3,000

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$0.137

Distributors (In-Stock)

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Digiode

USA . 3,174 parts In-Stock

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$0.100

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3,174

$0.100

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Chip Stock

USA . 69,000 parts In-Stock

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69,000

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Vyrian

USA . 4,438 parts In-Stock

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4,438

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Anansix

USA . 1,386 parts In-Stock

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1,386

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 5,046,066 parts In-Stock

1+ parts

$0.088

100+ parts

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5,046,066

$0.088

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Semicontronic

India . 5,046,012 parts In-Stock

1+ parts

$0.089

100+ parts

$0.087

1k+ parts

$0.086

10k+ parts

-

5,046,012

$0.089

$0.087

$0.086

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Corphita

USA . 3,401 parts In-Stock

1+ parts

$0.094

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3,401

$0.094

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AZTECH Wire

Italy . 7,050 parts In-Stock

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$0.140

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$0.140

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Corohmni

South Africa . 308 parts In-Stock

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$0.155

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308

$0.155

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Continental Prestige Electronics

USA . 22,689,640 parts In-Stock

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$0.153

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22,689,640

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$0.153

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Argo Parts USA

USA . 4,349 parts In-Stock

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4,349

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Lixinc

USA . 2,638 parts In-Stock

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2,638

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Supply Digital

USA . 2,042 parts In-Stock

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2,042

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UNI Independent Distributors

Spain . 1,846 parts In-Stock

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Perfect Parts

USA . 1,096 parts In-Stock

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1,096

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Kepictronics

USA . 370 parts In-Stock

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370

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Unlock the power of innovation with the PMPB27EP,115 by NXP Semiconductors. This high-quality P-CHANNEL transistor offers enhanced performance and reliability for a wide range of applications. From consumer electronics to industrial automation, the possibilities are endless. NXP Semiconductors is a trusted manufacturer known for their cutting-edge technology and exceptional product quality. Experience the value and benefits of this versatile transistor today and take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: P-CHANNEL

P-CHANNEL transistors are known for their low on-state resistance and high efficiency, making them suitable for power management applications.

Configuration: SINGLE

Single configuration transistors are easy to integrate into circuits and provide a simple and straightforward solution for circuit design.

Surface Mount: YES

Surface mount transistors are compact and easy to install, saving space on PCBs and allowing for high-density circuit design.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high performance and fast switching speeds, making them ideal for applications requiring quick response times.

Maximum Drain Current (Abs) (ID): 8.8 A

With a high maximum drain current, this transistor can handle a large amount of power, making it suitable for high-power applications.

Maximum Power Dissipation (Abs): 1.7 W

The low power dissipation of this transistor indicates high efficiency and reduced heat generation, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and stability, providing consistent performance over time.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate in harsh environments without overheating or performance degradation.

Terminal Finish: TIN

Tin terminal finish ensures good electrical conductivity and corrosion resistance, enhancing the overall durability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

The short time required at peak reflow temperature simplifies the manufacturing process and reduces the risk of thermal damage to the transistor.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for reliable soldering and ensures strong mechanical bonds, enhancing the overall reliability of the transistor.

Technical Specifications

Other Function Transistors PMPB27EP,115 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8.8 A

Maximum Drain Current (ID):

8.8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PMPB27EP,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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