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PMDT290UCE

NXP Semiconductors

PMDT290UCE by NXP Semiconductors

The NXP Semiconductors PMDT290UCE is a Small Signal FET with N-CHANNEL and P-CHANNEL configurations. It features 2 elements with built-in diode for switching applications, operating in enhancement mode. With a max ID of 0.8A and RDS(on) of 0.38Ω, it's ideal for surface mount designs requiring a min DS breakdown voltage of 20V.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Cyclops Electronics Ltd

UK . 8,000 parts In-Stock

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Vyrian

USA . 7,342 parts In-Stock

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Digiode

USA . 4,193 parts In-Stock

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Anansix

USA . 1,156 parts In-Stock

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Nova Conductors

Japan . 89 parts In-Stock

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AZTECH Wire

Italy . 10,637 parts In-Stock

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$5.518

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One Stop Electronics

USA . 1,360 parts In-Stock

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$19.050

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Ampacity Inc.

Singapore . 143 parts In-Stock

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$53.050

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Kepictronics

USA . 40,284 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Lixinc

USA . 4,440 parts In-Stock

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Supply Digital

USA . 2,409 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,177 parts In-Stock

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UNI Independent Distributors

Spain . 2,039 parts In-Stock

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Corphita

USA . 1,156 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the NXP Semiconductors PMDT290UCE Small Signal Field Effect Transistors. Crafted with precision and expertise, this product boasts N-Channel and P-Channel polarity for versatile applications in switching. With a surface-mount design and a minimum DS breakdown voltage of 20V, this transistor offers unparalleled performance and reliability. Whether you're a seasoned professional or a DIY enthusiast, the PMDT290UCE delivers exceptional value and efficiency, making it the perfect choice for all your electronic projects. Elevate your creations with NXP Semiconductors today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides good insulation and protection for the internal components, ensuring the longevity and reliability of the transistor.

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel types allows for flexibility in circuit design and application, making this transistor suitable for a variety of electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can rapidly turn on and off, making it ideal for controlling circuit signals and power.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this transistor can handle higher voltage levels without malfunctioning, ensuring reliable performance in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing Metal-Oxide Semiconductor technology, this transistor offers low power consumption, high efficiency, and fast switching speeds, making it an excellent choice for energy-efficient applications.

Maximum Drain Current (ID): 0.8 A

Capable of handling a maximum drain current of 0.8 A, this transistor can effectively manage current flow in a circuit, making it suitable for small signal applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMDT290UCE attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.8 A

Maximum Drain-Source On Resistance:

.38 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

PURE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMDT290UCE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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