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PMDT670UPE

NXP Semiconductors

PMDT670UPE by NXP Semiconductors

PMDT670UPE by NXP Semiconductors is a P-channel MOSFET designed for efficient switching applications. It features a 20V min DS breakdown voltage, 0.55A max drain current, and 0.85Ω on-resistance. Ideal for compact electronic designs with surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 3,402 parts In-Stock

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Digiode

USA . 2,618 parts In-Stock

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Anansix

USA . 2,175 parts In-Stock

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AZTECH Wire

Italy . 10,798 parts In-Stock

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$7.220

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One Stop Electronics

USA . 566 parts In-Stock

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$13.050

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Corphita

USA . 4,009 parts In-Stock

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Perfect Parts

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UNI Independent Distributors

Spain . 1,668 parts In-Stock

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Supply Digital

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Overview

Unlock unparalleled performance with the PMDT670UPE from NXP Semiconductors—a leader in innovative solutions. This P-channel FET is designed for seamless switching applications, offering exceptional reliability and efficiency. Its compact design ensures easy integration into your projects, delivering outstanding value without compromising quality. Elevate your designs with NXP's trusted technology, empowering you to achieve superior results in diverse electronic applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are beneficial for high-side switching applications, offering flexibility in circuit design, especially where complementary transistor configurations are preferred.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration enhances the FET's functionality by integrating a diode to protect against reverse polarity, increasing reliability in switching applications.

Transistor Application: SWITCHING

Designed explicitly for switching, this FET provides quick response times and efficient performance in digital and power management circuits.

Surface Mount: YES

Surface mount technology offers a compact design, allowing for smaller circuit boards and higher component density, which is essential in modern electronic devices.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures safe operation in a variety of electronic circuits, providing confidence for use in different applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout and space optimization on circuit boards, leading to easier integration into designs.

Terminal Form: FLAT

Flat terminals improve the connection integrity and support better thermal performance, making assembly and cooling more effective.

Operating Mode: ENHANCEMENT MODE

Enhancement mode allows for low standby power consumption and high-speed operation, making it ideal for modern low-power applications.

No. of Elements: 2

Having two elements provides additional functionality and reduces the number of discrete components needed, simplifying circuit design.

No. of Terminals: 6

Six terminals ensure sufficient connections for diverse circuit requirements, increasing versatility and ease of integration into complex systems.

Package Style (Meter): SMALL OUTLINE

The small outline design is advantageous for space-constrained applications, allowing for efficient use of board area without compromising performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making this transistor highly efficient for signal processing applications.

Transistor Element Material: SILICON

Silicon as the element material ensures good electrical properties and reliability in high-temperature environments, suitable for a wide range of applications.

Terminal Finish: PURE TIN

The pure tin terminal finish offers excellent solderability and helps to prevent corrosion, enhancing the longevity and reliability of the connections.

Maximum Drain Current (ID): 0.55 A

0.55 A maximum drain current provides good operational capacity for driving various loads, making it suitable for multiple applications.

Maximum Drain-Source On Resistance: 0.85 ohm

A low on-resistance of 0.85 ohm reduces power loss during switching, improving overall efficiency and thermal performance in applications.

Terminal Position: DUAL

Dual terminal position facilitates more versatile placement options on PCB, aiding in effective layout design and circuit routing.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMDT670UPE attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.55 A

Maximum Drain-Source On Resistance:

.85 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

PURE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMDT670UPE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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