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PCF8570TD-T

NXP Semiconductors

PCF8570TD-T by NXP Semiconductors

PCF8570TD-T by NXP is a 256x8 SRAM with a max operating temp of 85 °C and supports supply voltages from 2.5V to 6V. It features synchronous operation, open-drain output, and operates at up to 0.1 MHz, ideal for industrial applications. Its compact SO package ensures efficient space utilization in designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,977 parts In-Stock

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Digiode

USA . 3,873 parts In-Stock

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Anansix

USA . 1,589 parts In-Stock

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One Stop Electronics

USA . 1,352 parts In-Stock

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$18.000

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UNI Independent Distributors

Spain . 7,078 parts In-Stock

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Corphita

USA . 3,954 parts In-Stock

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Overview

Unlock unparalleled performance with the PCF8570TD-T SRAM from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers a reliable solution perfect for industrial applications. With its compact design and robust temperature range, this memory chip ensures efficiency without compromising durability. Enhance your projects with faster access times and versatile functionality that drive your designs forward while ensuring long-term value and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensuring protection against environmental factors, contributing to the longevity of the SRAM.

Surface Mount: YES

Enables compact and efficient PCB design, ideal for modern electronic applications.

Package Shape: RECTANGULAR

Standardized shape facilitates easier integration into designs and space optimization on PCBs.

Operating Mode: SYNCHRONOUS

Provides synchronized data transfer, enhancing performance in timing-critical applications.

Input/Output Type: COMMON

Compatible with a wide range of digital communication protocols, easing integration into existing systems.

Nominal Supply Voltage / Vsup: 5 V

Common voltage level simplifies design considerations and ensures widespread compatibility.

Power Supplies (V): 3/5

Versatile supply options enhance adaptability for various applications and power management strategies.

No. of Terminals: 8

Consolidates connections, reducing space requirements on the PCB while maintaining functionality.

Package Style (Meter): SMALL OUTLINE

Compact form factor is suitable for space-constrained applications, making it ideal for portable devices.

Maximum Operating Temperature: 85 °C

Allows operation in industrial environments, making it suitable for rugged applications.

Organization: 256X8

Efficient organization structure enables effective data management for specific use cases.

Output Characteristics: OPEN-DRAIN

Flexible output configuration simplifies interfacing with various components in digital circuits.

Minimum Standby Voltage: 1 V

Low standby voltage requirement supports energy-efficient designs, minimizing power consumption.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliable operation in extreme conditions, enhancing application versatility.

Terminal Position: DUAL

Facilitates effective integration in multicoloured device layouts without compromising on design integrity.

Maximum Seated Height: 2.65 mm

Low-profile design helps in achieving slimmer device profiles, benefiting modern electronic aesthetics.

Maximum Clock Frequency (fCLK): 0.1 MHz

Sufficient frequency for many standard applications, ensuring reliable data handling and processing.

Width: 7.5 mm

Compact width allows for efficient use of PCB space while maintaining performance.

Minimum Supply Voltage (Vsup): 2.5 V

Supports low-voltage operation, enhancing compatibility with battery-operated devices.

Maximum Time At Peak Reflow Temperature (s): 40

Flexibility during the manufacturing process, assisting in achieving higher yield rates.

Peak Reflow Temperature °C: 260

High temperature tolerance ensures compatibility with industry-standard soldering techniques.

Length: 7.55 mm

Compact length contributes to reduced PCB footprint, supporting modern design trends.

Temperature Grade: INDUSTRIAL

Designed for rigorous industrial standards, ensuring reliability in demanding environments.

Technology: CMOS

Optimized for low power consumption and high speed, making it ideal for various applications.

Parallel or Serial: SERIAL

Efficient serial communication reduces pin count and saves space on PCB connections.

Terminal Form: GULL WING

Standard form factor assists in easy surface mounting and soldering processes.

No. of Words: 256 words

Sufficient memory capacity makes it suitable for various applications that require moderate data storage.

Memory Width: 8

Enables processing of 8 bits of data simultaneously, improving performance in tasks requiring bus width.

Terminal Pitch: 1.27 mm

Standard pitch allows for compatibility with most PCB designs, simplifying integration.

No. of Words Code: 256

Efficient memory structure provides the right balance between capacity and performance.

Maximum Supply Voltage (Vsup): 6 V

Provides flexibility in power supply options, accommodating various system requirements.

Memory Density: 2048 bit

Adequate density for small to medium applications, aligning with the needs of many consumer products.

Memory IC Type: STANDARD SRAM

Well-known memory type ensures robustness and reliability in various applications.

Maximum Access Time: 3400 ns

Acceptable access time for many applications, ensuring a good balance between speed and memory size.

Technical Specifications

SRAM PCF8570TD-T attributes and parameters. Explore more SRAM devices from NXP Semiconductors

Specs

Maximum Access Time:

3400 ns

Additional Features:

2-WIRE I2C SERIAL INTERFACE

Maximum Clock Frequency (fCLK):

.1 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PDSO-G8

Length:

7.55 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

2.65 mm

Minimum Standby Voltage:

1 V

Sub-Category:

SRAMs

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

7.5 mm

Trade Compliance

PCF8570TD-T Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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