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PCF8570PN

NXP Semiconductors

PCF8570PN by NXP Semiconductors

PCF8570PN by NXP Semiconductors is a 256x8 SRAM with a synchronous operating mode and open-drain output. It operates at 5V, supports temperatures from -40 °C to 85 °C, and features an in-line package. Ideal for industrial applications requiring reliable memory storage.

Median Price

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Lifecycle Status

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In-Stock Inventory

1k+

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Digiode

USA . 1,745 parts In-Stock

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Vyrian

USA . 1,267 parts In-Stock

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Anansix

USA . 660 parts In-Stock

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660

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Extreme Components

USA . 174 parts In-Stock

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174

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One Stop Electronics

USA . 1,169 parts In-Stock

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$22.000

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UNI Independent Distributors

Spain . 8,394 parts In-Stock

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Corphita

USA . 4,958 parts In-Stock

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Overview

Unlock the potential of your projects with the PCF8570PN from NXP Semiconductors—your key to reliable, high-performance SRAM. Renowned for its superior quality and innovative technology, NXP delivers a versatile solution perfect for industrial applications. With low power consumption and robust temperature performance, this memory chip enhances efficiency and ensures longevity, empowering your designs to thrive in any condition. Choose PCF8570PN for unmatched reliability and innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection against environmental factors, ensuring the longevity of the SRAM product.

Package Shape: RECTANGULAR

The rectangular shape allows efficient use of PCB space, making integration into designs more straightforward.

Operating Mode: SYNCHRONOUS

Synchronous operation helps improve speed and performance, making this SRAM ideal for applications requiring fast access times.

Input/Output Type: COMMON

Common I/O type enhances compatibility with various systems, simplifying integration into existing designs.

Nominal Supply Voltage / Vsup: 5 V

A nominal supply voltage of 5 V is standard in many applications, offering versatility and ease of use.

Power Supplies (V): 3/5

Support for both 3 V and 5 V power supplies allows greater flexibility in various design environments.

No. of Terminals: 8

An 8-terminal configuration balances simplicity and connectivity, making it easier to use without overcrowding the PCB.

Package Style (Meter): IN-LINE

In-line package style is convenient for assembly and integrates well into automated manufacturing processes.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliability in industrial applications where heat may be a concern.

Organization: 256X8

This organization supports a variety of data structures and enhances operational efficiency while managing data.

Output Characteristics: OPEN-DRAIN

Open-drain output is ideal for wired AND configurations and allows for easier interfacing with different logic levels.

Minimum Standby Voltage: 1 V

A low minimum standby voltage allows this SRAM to operate effectively in low-power applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature makes this SRAM suitable for extreme environments, enhancing its versatility.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold finish ensures excellent corrosion resistance and minimizes contact resistance for reliable connections.

Terminal Position: DUAL

Dual terminal positioning facilitates better layout options on PCBs, providing flexibility during design.

Maximum Seated Height: 4.2 mm

A compact maximum seated height helps with minimizing the overall footprint on a PCB, optimizing space.

Maximum Clock Frequency (fCLK): 0.1 MHz

A maximum clock frequency of 0.1 MHz is adequate for many synchronous applications, ensuring reliable performance.

Width: 7.62 mm

A width of 7.62 mm strikes a balance between compactness and ease of handling during placement.

Minimum Supply Voltage (Vsup): 2.5 V

The ability to operate at a minimum supply voltage of 2.5 V increases the SRAM's compatibility with lower voltage systems.

Length: 9.5 mm

Its length of 9.5 mm is optimal for designs where space is limited, facilitating compact layouts.

Temperature Grade: INDUSTRIAL

An industrial temperature grade signifies robustness, making this SRAM suitable for demanding applications.

Technology: CMOS

CMOS technology is energy-efficient and allows for high density, making this SRAM suitable for a variety of applications.

Parallel or Serial: SERIAL

The serial interface simplifies connections and reduces pin count, ideal for space-constrained applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer strong mechanical stability and are favored in rugged applications.

Maximum Supply Current: 0.2 mA

Low maximum supply current minimizes power consumption, making it apt for battery-operated devices.

No. of Words: 256 words

With 256 words, this SRAM provides a reasonable data capacity for applications needing moderate storage.

Memory Width: 8

An 8-bit memory width allows for processing of byte-sized data, which is common in many computing applications.

Terminal Pitch: 2.54 mm

The standard 2.54 mm pitch helps in compatibility with common PCB layouts and soldering processes.

No. of Words Code: 256

The 256 words code reflects the memory organization, simplifying design choices for applications requiring specific memory mappings.

Maximum Supply Voltage (Vsup): 6 V

A high maximum supply voltage of 6 V provides flexibility for various power configurations in different systems.

Memory Density: 2048 bit

With a memory density of 2048 bits, it offers a good balance of size and capacity for various applications.

Memory IC Type: STANDARD SRAM

Being a standard SRAM type ensures broad compatibility and familiarity, reducing learning curves for engineers.

Maximum Standby Current: 0.0000004 Amp

Extremely low standby current enhances energy efficiency, making it a viable option for power-sensitive applications.

Technical Specifications

SRAM PCF8570PN attributes and parameters. Explore more SRAM devices from NXP Semiconductors

Specs

Additional Features:

2-WIRE I2C SERIAL INTERFACE

Maximum Clock Frequency (fCLK):

.1 MHz

Input/Output Type:

COMMON

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e4

Length:

9.5 mm

Memory Density:

2048 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

256 words

No. of Words Code:

256

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256X8

Output Characteristics:

OPEN-DRAIN

Output Enable:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP8,.3

Package Shape:

Package Style (Meter):

IN-LINE

Parallel or Serial:

SERIAL

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

4.2 mm

Maximum Standby Current:

.0000004 Amp

Minimum Standby Voltage:

1 V

Sub-Category:

SRAMs

Maximum Supply Current:

.2 mA

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

PCF8570PN Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.41

SB

8542.32.00.40

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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