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PBSS5480X,135

NXP Semiconductors

PBSS5480X,135 by NXP Semiconductors

PBSS5480X,135 by NXP Semiconductors is a PNP BJT transistor with 80V VCEO and 4A IC for switching applications. It has a min hFE of 200, operates up to 150°C, and features a small outline package style. Suitable for surface mount designs requiring high power dissipation up to 2.5W.

Median Price

$0.144

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$1.060

100+ parts

$0.965

1k+ parts

$0.869

10k+ parts

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100

$1.060

$0.965

$0.869

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Future Electronics

Canada . 128,000 parts In-Stock

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$0.126

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$0.126

Farnell

UK . 31,830 parts In-Stock

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$0.146

31,830

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$0.146

Verical

USA . 23,250 parts In-Stock

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$0.134

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$0.134

Rochester

USA . 23,080 parts In-Stock

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$0.144

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$0.120

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$0.107

23,080

-

$0.144

$0.120

$0.107

RS (Exports)

UK . 10,830 parts In-Stock

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10,830

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EBV Elektronik

Germany . 4,000 parts In-Stock

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Chip1Stop

Japan . 2,440 parts In-Stock

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$0.145

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$0.145

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Arrow

USA . 114 parts In-Stock

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$0.121

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114

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$0.121

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Distributors (In-Stock)

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Digiode

USA . 2,008 parts In-Stock

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$0.112

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$0.112

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Nova Conductors

Japan . 83 parts In-Stock

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$0.171

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Chip Stock

USA . 156,000 parts In-Stock

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IBS Electronics

USA . 128,000 parts In-Stock

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$0.165

128,000

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$0.165

NAC Semi

USA . 40,000 parts In-Stock

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$0.222

40,000

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$0.222

Cyclops Electronics Ltd

UK . 3,231 parts In-Stock

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Anansix

USA . 2,863 parts In-Stock

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Vyrian

USA . 2,558 parts In-Stock

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2,558

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Distributors (Availability)

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Ampacity Inc.

Singapore . 28,627 parts In-Stock

1+ parts

$0.100

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28,627

$0.100

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Semicontronic

India . 28,510 parts In-Stock

1+ parts

$0.100

100+ parts

$0.098

1k+ parts

$0.097

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28,510

$0.100

$0.098

$0.097

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Corphita

USA . 2,705 parts In-Stock

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$0.106

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$0.106

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AZTECH Wire

Italy . 10,755 parts In-Stock

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$0.140

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Corohmni

South Africa . 921 parts In-Stock

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$0.167

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921

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Bastille Electronics

Australia . 550 parts In-Stock

1+ parts

$0.171

100+ parts

$0.162

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$0.154

10k+ parts

$0.152

550

$0.171

$0.162

$0.154

$0.152

Argo Parts USA

USA . 3,547 parts In-Stock

1+ parts

$0.171

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$0.166

3,547

$0.171

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$0.166

Modulus Dynamics

Lithuania . 75 parts In-Stock

1+ parts

$0.181

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$0.180

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$0.174

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75

$0.181

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Aztec Data Supply Inc.

USA . 1,864 parts In-Stock

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$0.887

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1,864

$0.887

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.060

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$0.965

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$0.869

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100

$1.060

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$0.869

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Continental Prestige Electronics

USA . 31,830 parts In-Stock

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$0.134

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Glotronic Ltd.

UK . 25,600 parts In-Stock

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Perfect Parts

USA . 13,440 parts In-Stock

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Eastek

USA . 4,000 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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UNI Independent Distributors

Spain . 3,818 parts In-Stock

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iodParts Technologies Inc.

India . 1,353 parts In-Stock

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$0.320

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1,353

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Supply Digital

USA . 1,144 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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$3.173

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$3.173

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$3.173

950

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$3.173

$3.173

$3.173

Lucentia Tech

USA . 950 parts In-Stock

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$3.173

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$3.173

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$3.173

950

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$3.173

$3.173

$3.173

Overview

Upgrade your electronic projects with the PBSS5480X,135 by NXP Semiconductors! Designed with precision and quality, this PNP Small Signal Bipolar Junction Transistor is perfect for switching applications. Its high DC current gain and low power dissipation ensure optimal performance, while its compact design allows for easy integration. Trust NXP Semiconductors to deliver reliable components that enhance your devices' functionality. Experience top-notch quality and efficiency with the PBSS5480X,135 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ensuring it can withstand various operating conditions.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into existing circuits that require a PNP transistor, making it versatile for a range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, making the transistor easier to work with for various applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance when switching between different states.

Surface Mount: YES

Being surface mount compatible allows for easy and convenient PCB assembly, saving space and facilitating mass production.

Maximum Power Dissipation (Abs): 2.5 W

With a high power dissipation capacity, this transistor can handle substantial power loads without overheating, ensuring reliability in operation.

Minimum DC Current Gain (hFE): 200

The high DC current gain ensures the transistor amplifies the input signal effectively, making it suitable for amplification applications where signal strength is critical.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows the transistor to operate in demanding environments without performance degradation, increasing its reliability and longevity.

Maximum Collector-Emitter Voltage: 80 V

The high collector-emitter voltage rating provides a wide voltage tolerance, ensuring the transistor can handle higher voltage levels without breakdown, enhancing its versatility.

Maximum Collector Current (IC): 4 A

Capable of handling high collector currents, this transistor is suitable for applications requiring high current flow, making it a versatile choice for various circuits.

Nominal Transition Frequency (fT): 125 MHz

The high transition frequency allows for efficient signal switching and amplification at higher frequencies, making the transistor ideal for high-speed applications such as RF circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBSS5480X,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBSS5480X,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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