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PBSS4160DPN,115

NXP Semiconductors

PBSS4160DPN,115 by NXP Semiconductors

PBSS4160DPN,115 by NXP Semiconductors is a Small Signal BJT with NPN and PNP channels. It has 2 elements in a rectangular package with Gull Wing terminals. Ideal for switching applications, it offers a max collector-emitter voltage of 60V and max operating temp of 150°C.

Median Price

$0.337

Lifecycle Status

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22

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1k+

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Chip1Stop

Japan . 2,885 parts In-Stock

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$0.538

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$0.538

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DigiKey

USA . 6,773 parts In-Stock

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$0.570

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$0.224

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$0.151

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$0.570

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$0.151

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Mouser Electronics

USA . 4,009 parts In-Stock

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$0.890

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$0.390

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$0.178

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$0.159

4,009

$0.890

$0.390

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$0.159

TTI

USA . 609,000 parts In-Stock

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$0.097

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$0.097

Future Electronics

Canada . 333,000 parts In-Stock

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$0.450

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$0.450

EBV Elektronik

Germany . 45,000 parts In-Stock

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Verical

USA . 2,885 parts In-Stock

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$0.205

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$0.146

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$0.093

2,885

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$0.146

$0.093

Arrow

USA . 1,200 parts In-Stock

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$0.100

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$0.092

1,200

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Farnell

UK . 441 parts In-Stock

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$1.070

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$0.760

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$0.745

441

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$0.745

Element14

Singapore . 441 parts In-Stock

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$0.157

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$0.116

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$0.113

441

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Rochester

USA . 26 parts In-Stock

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Digiode

USA . 3,257 parts In-Stock

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$0.081

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Nova Conductors

Japan . 69 parts In-Stock

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$0.124

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Martec Srl

Italy . 2,000,000 parts In-Stock

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IBS Electronics

USA . 333,000 parts In-Stock

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$0.792

333,000

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$0.792

NAC Semi

USA . 267,000 parts In-Stock

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$0.900

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$0.900

Chip Stock

USA . 72,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 14,832 parts In-Stock

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ComSIT Distribution GmbH

Germany . 9,000 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 4,146 parts In-Stock

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Vyrian

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Anansix

USA . 767 parts In-Stock

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Ampacity Inc.

Singapore . 443,456 parts In-Stock

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$0.072

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Semicontronic

India . 214,076 parts In-Stock

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Corphita

USA . 4,046 parts In-Stock

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Argo Parts USA

USA . 3,142 parts In-Stock

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Corohmni

South Africa . 248 parts In-Stock

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AZTECH Wire

Italy . 7,271 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,344 parts In-Stock

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$0.870

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Perfect Parts

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Eastek

USA . 126,000 parts In-Stock

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GreenTree Electronics

Israel . 126,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Authorized Procurement Solutions

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Robosynatics

Brazil . 9,767 parts In-Stock

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Lucentia Tech

USA . 9,767 parts In-Stock

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$0.126

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UNI Independent Distributors

Spain . 7,548 parts In-Stock

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Component Stockers USA

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Supply Digital

USA . 1,867 parts In-Stock

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Bastille Electronics

Australia . 650 parts In-Stock

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Continental Prestige Electronics

USA . 496 parts In-Stock

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$0.197

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Overview

Discover the PBSS4160DPN,115 by NXP Semiconductors, a top-tier manufacturer known for exceptional quality and reliability. This small signal bipolar junction transistor is perfect for switching applications, offering high performance in a compact package. With NPN and PNP configurations, this transistor provides versatility and efficiency for your designs. Benefit from its maximum power dissipation of 0.7 W, making it a cost-effective solution without compromising on performance. Trust NXP Semiconductors to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy body material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in circuit design, making this transistor suitable for a variety of applications.

Configuration: SEPARATE, 2 ELEMENTS

The separate, 2 element configuration allows for independent control and operation of each element, providing flexibility in circuit design.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can quickly turn on and off, making it ideal for applications where rapid switching is required.

Surface Mount: YES

The surface mount capability allows for easy and efficient assembly onto circuit boards, saving space and simplifying the manufacturing process.

Maximum Collector-Emitter Voltage: 60 V

With a high maximum voltage rating, this transistor can handle higher voltage levels, making it suitable for a wide range of circuit applications.

Nominal Transition Frequency (fT): 220 MHz

The high nominal transition frequency indicates fast response times and high-frequency capabilities, making this transistor suitable for high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBSS4160DPN,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBSS4160DPN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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