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PBSS5360PASX

Nexperia

PBSS5360PASX by Nexperia

PBSS5360PASX by Nexperia is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 60V and a max collector current of 3A. It is commonly used for switching applications due to its high DC current gain (hFE) of 80 and fast nominal transition frequency (fT) of 120MHz.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 15,000 parts In-Stock

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Future Electronics

Canada . 3,000 parts In-Stock

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Chip1Stop

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Nova Conductors

Japan . 500 parts In-Stock

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Chip Stock

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Vyrian

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Ampacity Inc.

Singapore . 10,016 parts In-Stock

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AZTECH Wire

Italy . 12,504 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,585 parts In-Stock

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Argo Parts USA

USA . 4,812 parts In-Stock

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Modulus Dynamics

Lithuania . 20,258 parts In-Stock

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Advanced Electronics

New Zealand . 21 parts In-Stock

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Corohmni

South Africa . 315 parts In-Stock

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Perfect Parts

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Eastek

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Futuretech Components

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A-Z Elektronik GmbH

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iodParts Technologies Inc.

India . 2,289 parts In-Stock

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Supply Digital

USA . 1,585 parts In-Stock

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Overview

Discover the PBSS5360PASX by Nexperia, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. Manufactured by Nexperia, a trusted industry leader, this PNP transistor offers exceptional value and benefits to customers. With a maximum collector-emitter voltage of 60V and a maximum collector current of 3A, this transistor delivers reliable performance. Its surface mount design and small outline package make it easy to integrate into various electronic devices. Whether you're designing consumer electronics, automotive systems, or industrial equipment, the PBSS5360PASX is the perfect choice for your switching needs. Experience the advantages of Nexperia's superior craftsmanship and unlock the full potential of your applications with this outstanding transistor.

Feature Benefit Bullets

Package Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity/Channel Type: PNP

Suitable for various switching applications due to its PNP configuration.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in different projects.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering reliable performance in such scenarios.

Surface Mount: YES

Allows for easy mounting on circuit boards, saving space and simplifying assembly processes.

Minimum DC Current Gain (hFE): 80

Ensures consistent and reliable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 60 V

Suitable for use in applications where a higher voltage tolerance is required.

Maximum Collector Current (IC): 3 A

Capable of handling higher currents, making it suitable for applications with higher power requirements.

Nominal Transition Frequency (fT): 120 MHz

Provides high-frequency performance, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PBSS5360PASX attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

S-PDSO-N3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBSS5360PASX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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