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NX3DV3899HR,115

NXP Semiconductors

NX3DV3899HR,115 by NXP Semiconductors

NX3DV3899HR,115 from NXP Semiconductors is a versatile DPDT multiplexer designed for automotive applications. It features a max operating temp of 125 °C, operates b/w 1.4-4.3V, and has a low on-state resistance of just 10Ω. Ideal for efficient signal routing in compact designs.

Median Price

$0.387

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 46 parts In-Stock

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-

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$0.387

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$0.363

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46

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$0.387

$0.363

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Distributors (In-Stock)

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Vyrian

USA . 5,969 parts In-Stock

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5,969

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Digiode

USA . 3,956 parts In-Stock

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Anansix

USA . 1,508 parts In-Stock

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1,508

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Distributors (Availability)

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Microchip USA

USA . 371 parts In-Stock

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$1.193

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371

$1.193

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AZTECH Wire

Italy . 456 parts In-Stock

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$20.800

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456

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Corphita

USA . 4,596 parts In-Stock

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4,596

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UNI Independent Distributors

Spain . 4,039 parts In-Stock

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Component Stockers USA

USA . 805 parts In-Stock

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$0.480

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805

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$0.480

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Overview

Elevate your designs with the NX3DV3899HR,115 from NXP Semiconductors—a trusted name in innovation. This robust multiplexer ensures seamless signal routing with unmatched reliability and performance across automotive applications. Engineered for extreme conditions, it delivers exceptional efficiency and minimal power loss. Experience enhanced versatility and quality as you integrate this high-performance solution into your projects, driving your success to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robust protection and longevity, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for compact designs and improved circuit density, ideal for modern electronic applications.

No. of Functions: 2

With two functions, this multiplexer offers versatility in signal routing, efficiently handling multiple tasks.

Package Shape: SQUARE

The square package shape promotes efficient space utilization on PCBs, contributing to optimized circuit board layout.

Power Supplies (V): 1.4/4.3

Supports a range of supply voltages, making it compatible with different systems and enhancing design flexibility.

No. of Terminals: 16

Having 16 terminals provides ample connection points for complex applications and enables multi-channel signal control.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging facilitates easy soldering and handling, ensuring reliable performance throughout the lifecycle.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature allows this product to function reliably in demanding environments, like automotive applications.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance in extreme cold conditions, enhancing its applicability.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term durability.

Terminal Position: QUAD

Quad terminal position allows for effective signal management and optimized layout in multi-channel configurations.

Output (V): SEPARATE OUTPUT

Separate output design enables independent signal routing, facilitating clearer communication in complex circuitry.

Other IC type: DPDT

Being a Double Pole Double Throw (DPDT) device provides enhanced switching capability, making it suitable for sophisticated applications.

Maximum Time At Peak Reflow Temperature (s): 30

The ability to withstand 30 seconds at peak reflow temperatures ensures compatibility with standard PCB assembly processes.

Peak Reflow Temperature °C: 260

A peak reflow temperature of 260 °C allows for safe integration into automated assembly systems without compromising integrity.

Maximum On-state Resistance (Ron): 10 ohm

A low on-state resistance ensures minimal voltage drop and power loss, resulting in efficient energy use.

Maximum Switch-on Time: 90 ns

Fast switch-on time of 90 ns enhances the product’s performance in high-speed applications, ensuring timely signal processing.

Temperature Grade: AUTOMOTIVE

Rated for automotive use, this product is designed to meet stringent reliability standards common in vehicle electronics.

Terminal Form: NO LEAD

No lead design minimizes space requirement on PCBs while enhancing performance and environmental sustainability.

Terminal Pitch: 0.5 mm

A terminal pitch of 0.5 mm allows for high density connections, making it suitable for compact electronic designs.

Switching (V): BREAK-BEFORE-MAKE

The break-before-make switching characteristic prevents short circuits during operation, enhancing system reliability.

Technical Specifications

Multiplexers & Switches NX3DV3899HR,115 attributes and parameters. Explore more Multiplexers & Switches devices from NXP Semiconductors

Specs

Other IC type:

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Terminals:

16

Maximum On-state Resistance (Ron):

10 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output (V):

SEPARATE OUTPUT

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC16,.12SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.4/4.3

Qualification:

Not Qualified

Sub-Category:

Multiplexer or Switches

Surface Mount:

YES

Maximum Switch-on Time:

90 ns

Switching (V):

BREAK-BEFORE-MAKE

Temperature Grade:

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NX3DV3899HR,115 Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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