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MRF5711LT1

NXP Semiconductors

MRF5711LT1 by NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Package Body Material: PLASTIC/EPOXY;

Median Price

$2.450

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (In-Stock)

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Component Electronics Inc.

Canada . 500 parts In-Stock

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$2.310

100+ parts

$1.730

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$1.500

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500

$2.310

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Forefront Electronics and Design

USA . 350 parts In-Stock

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$2.450

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TEDSS.com

USA . 7,020 parts In-Stock

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$2.500

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Legend Electronics Inc.

USA . 594,570 parts In-Stock

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Netsource Technology, Inc.

USA . 12,810 parts In-Stock

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Pegasus Components GmbH

Germany . 6,100 parts In-Stock

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Prism Electronics

USA . 5,815 parts In-Stock

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Digiode

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ComSIT Distribution GmbH

Germany . 2,483 parts In-Stock

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ComSIT USA

USA . 2,483 parts In-Stock

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Semi Source

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Bristol Electronics

USA . 1,382 parts In-Stock

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Sea View Technologies

USA . 1,067 parts In-Stock

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Anansix

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Mil-Aero Solutions, Inc.

USA . 539 parts In-Stock

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Q Components

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PC Components Company LLC

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Vyrian

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Distributors (Availability)

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One Stop Electronics

USA . 1,579 parts In-Stock

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$51.050

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Kepictronics

USA . 26,000 parts In-Stock

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Perfect Parts

USA . 6,950 parts In-Stock

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Corphita

USA . 4,282 parts In-Stock

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UNI Independent Distributors

Spain . 4,148 parts In-Stock

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Assy Fe

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A-Z Elektronik GmbH

Germany . 2,262 parts In-Stock

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MRF5711LT1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

1 pF

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Minimum DC Current Gain (hFE):

50

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.33 W

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MRF5711LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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