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MRF5812R2

Advanced Power Technology

MRF5812R2 by Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN LEAD;

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) MRF5812R2 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Advanced Power Technology

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MRF5812R2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-384-1796, 5961013841796

NIIN

013841796

Manufacturer Highlights

Advanced Power Technology

Established in 1990, Advanced Power Technology is a leading independent supplier of Energy Efficient Critical Power and Cooling Systems. We are experts in designing, building and supporting data centres, server rooms and comms rooms. We always strive to implement the most resilient, yet energy efficient solution. We provide initial consultation and specification, through to project implementation and beyond. We undertake projects of all sizes in all market sectors. We can advise and deliver the solution best suited to your needs whatever the circumstances dictate.

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