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MD7IC2755GNR1

NXP Semiconductors

MD7IC2755GNR1 by NXP Semiconductors

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 10; Gain: 23 dB;

Median Price

$102.184

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

MD7IC2755GNR1 by NXP Semiconductors
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

$90.830

1k+ parts

$81.270

10k+ parts

$76.490

1,500

-

$90.830

$81.270

$76.490

Verical

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

$113.537

1k+ parts

$101.588

10k+ parts

$95.612

1,500

-

$113.537

$101.588

$95.612

DigiKey

USA . 425 parts In-Stock

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425

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Distributors (In-Stock)

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Digiode

USA . 1,307 parts In-Stock

1+ parts

$96.130

100+ parts

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1,307

$96.130

-

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Vyrian

USA . 1,566 parts In-Stock

1+ parts

$101.190

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1,566

$101.190

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Anansix

USA . 2,001 parts In-Stock

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2,001

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Flip Electronics

USA . 1,500 parts In-Stock

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Manotoh

Italy . 16 parts In-Stock

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16

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ACDS - Activité Composants Distribution Service

France . 6 parts In-Stock

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6

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Distributors (Availability)

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Corphita

USA . 1,675 parts In-Stock

1+ parts

$91.071

100+ parts

-

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1,675

$91.071

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Perfect Parts

USA . 14,336 parts In-Stock

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14,336

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UNI Independent Distributors

Spain . 6,822 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,947 parts In-Stock

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4,947

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Cyclops Electronics Ltd (Excess)

UK . 243 parts In-Stock

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243

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Legend Electronics Inc. (Excess)

USA . 13 parts In-Stock

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13

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Speed Components Ltd (Excess)

Israel . 13 parts In-Stock

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13

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Technical Specifications

RF & Microwave Amplifiers MD7IC2755GNR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

23 dB

Maximum Input Power (CW):

30 dBm

JESD-609 Code:

e3

No. of Functions:

2

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2500 MHz

Package Body Material:

Package Equivalence Code:

FLNG,.67"H.SPACE

Power Supplies (V):

28

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

MOS

Terminal Finish:

MATTE TIN

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

MD7IC2755GNR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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