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MD7IC2755GNR1

Freescale Semiconductor

MD7IC2755GNR1 by Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Maximum Voltage Standing Wave Ratio: 10; Construction: COMPONENT; Characteristic Impedance: 50 ohm;

Median Price

$102.184

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

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Rochester

USA . 1,500 parts In-Stock

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$90.830

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$81.270

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$76.490

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Verical

USA . 1,500 parts In-Stock

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$113.537

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$101.588

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$95.612

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DigiKey

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Digiode

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Vyrian

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Anansix

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Manotoh

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ACDS - Activité Composants Distribution Service

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Corphita

USA . 1,675 parts In-Stock

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$91.071

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Perfect Parts

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UNI Independent Distributors

Spain . 6,822 parts In-Stock

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A-Z Elektronik GmbH

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Cyclops Electronics Ltd (Excess)

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Legend Electronics Inc. (Excess)

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Speed Components Ltd (Excess)

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Technical Specifications

RF & Microwave Amplifiers MD7IC2755GNR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from Freescale Semiconductor

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

23 dB

Maximum Input Power (CW):

30 dBm

JESD-609 Code:

e3

No. of Functions:

2

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2500 MHz

Package Body Material:

Package Equivalence Code:

FLNG,.67"H.SPACE

Power Supplies (V):

28

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

MOS

Terminal Finish:

Matte Tin (Sn)

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

MD7IC2755GNR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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