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MD7IC2755NR1

NXP Semiconductors

MD7IC2755NR1 by NXP Semiconductors

MD7IC2755NR1 by NXP Semiconductors is a RF amplifier with 2 functions, 23 dB gain, and operates b/w 2500-2700 MHz. It has a max input power of 30 dBm and VSWR of 10, suitable for narrow band high power applications requiring a characteristic impedance of 50 ohm.

Median Price

$74.168

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

MD7IC2755NR1 by NXP Semiconductors
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DigiKey

USA . 32,000 parts In-Stock

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32,000

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Flip Electronics (Authorized)

USA . 32,000 parts In-Stock

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Verical

USA . 32,000 parts In-Stock

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$41.356

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$41.356

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Rochester

USA . 21,990 parts In-Stock

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$106.980

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$95.720

10k+ parts

$90.090

21,990

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$106.980

$95.720

$90.090

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Nova Conductors

Japan . 50 parts In-Stock

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$105.518

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50

$105.518

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Digiode

USA . 3,033 parts In-Stock

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$113.212

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Flip Electronics

USA . 32,000 parts In-Stock

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Vyrian

USA . 28,452 parts In-Stock

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DigiKey Marketplace

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Anansix

USA . 616 parts In-Stock

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Ampacity Inc.

Singapore . 28,331 parts In-Stock

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$101.290

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$101.290

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Netroflash

USA . 50 parts In-Stock

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$105.518

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Corphita

USA . 2,396 parts In-Stock

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$107.253

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$107.253

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Microchip USA

USA . 4,122 parts In-Stock

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$171.585

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Lixinc

USA . 5,962 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,081 parts In-Stock

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5,081

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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Kepictronics

USA . 908 parts In-Stock

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UNI Independent Distributors

Spain . 696 parts In-Stock

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Overview

Elevate your RF and Microwave applications with the MD7IC2755NR1 by NXP Semiconductors. Known for their top-notch quality and innovation, NXP Semiconductors brings you a cutting-edge product that offers exceptional performance and reliability. Ideal for narrow band high power applications, this amplifier boasts a gain of 23 dB and operates between 2500 MHz to 2700 MHz. With a maximum input power of 30 dBm and a maximum VSWR of 10, this component is designed to optimize your system's efficiency and output. Trust NXP Semiconductors to deliver superior solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material suitable for portable and rugged applications

Maximum Input Power (CW): 30 dBm

Can handle high power input signals effectively without distortion

Maximum Voltage Standing Wave Ratio: 10

Efficient energy transfer and minimal signal reflection

Technology: MOS

Utilizes Metal Oxide Semiconductor technology for efficient amplification

Gain: 23 dB

Provides significant amplification to boost signals effectively

Minimum Operating Frequency: 2500 MHz

Suitable for operating at high frequency bands for various applications

Maximum Operating Frequency: 2700 MHz

Wide frequency range coverage for versatile use

Technical Specifications

RF & Microwave Amplifiers MD7IC2755NR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

23 dB

Maximum Input Power (CW):

30 dBm

JESD-609 Code:

e3

No. of Functions:

2

Maximum Operating Frequency:

2700 MHz

Minimum Operating Frequency:

2500 MHz

Package Body Material:

Package Equivalence Code:

FLNG,.67"H.SPACE

Power Supplies (V):

28

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Technology:

MOS

Terminal Finish:

TIN

Maximum Voltage Standing Wave Ratio:

10

Trade Compliance

MD7IC2755NR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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