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MD7IC2050NBR1

NXP Semiconductors

MD7IC2050NBR1 by NXP Semiconductors

MD7IC2050NBR1 by NXP Semiconductors is a RF amplifier with 28.5 dB gain, operating b/w 1880-2100 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for narrowband high-power applications in the RF & Microwave field.

Median Price

$63.315

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

MD7IC2050NBR1 by NXP Semiconductors
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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 394 parts In-Stock

1+ parts

-

100+ parts

$56.280

1k+ parts

$50.350

10k+ parts

$47.390

394

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$56.280

$50.350

$47.390

DigiKey

USA . 394 parts In-Stock

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394

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Verical

USA . 181 parts In-Stock

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$70.350

1k+ parts

$62.938

10k+ parts

$59.237

181

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$70.350

$62.938

$59.237

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,832 parts In-Stock

1+ parts

$48.792

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3,832

$48.792

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Nova Conductors

Japan . 32 parts In-Stock

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$55.940

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32

$55.940

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Anansix

USA . 798 parts In-Stock

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798

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Prism Electronics

USA . 464 parts In-Stock

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DigiKey Marketplace

USA . 394 parts In-Stock

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394

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Vyrian

USA . 259 parts In-Stock

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259

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 259 parts In-Stock

1+ parts

$43.660

100+ parts

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259

$43.660

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Corphita

USA . 1,876 parts In-Stock

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$46.224

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1,876

$46.224

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Netroflash

USA . 500 parts In-Stock

1+ parts

$55.940

100+ parts

-

1k+ parts

$53.143

10k+ parts

$52.024

500

$55.940

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$53.143

$52.024

UNI Independent Distributors

Spain . 7,384 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,468 parts In-Stock

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5,468

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Perfect Parts

USA . 520 parts In-Stock

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520

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Overview

Unleash the power of seamless connectivity with the MD7IC2050NBR1 by NXP Semiconductors. Crafted with precision and expertise, this RF & Microwave Amplifier delivers unparalleled performance and reliability. Whether you're in telecommunications, aerospace, or defense, this narrow band high power module is your go-to solution. Experience increased efficiency, enhanced signal quality, and unmatched durability with the MD7IC2050NBR1. Elevate your projects to new heights with this cutting-edge amplifier from NXP Semiconductors.

Feature Benefit Bullets

Maximum Input Power (CW): 28 dBm

The high maximum input power allows for strong signals to be processed without distortion, making this amplifier suitable for demanding applications.

Maximum Voltage Standing Wave Ratio: 5

A low VSWR indicates efficient power transfer and minimal signal loss, ensuring that the output signal closely matches the input signal.

Construction: MODULE

The modular design makes it easy to integrate this amplifier into existing systems or customize its functionality for specific applications.

Terminal Finish: Matte Tin (Sn)

Matte tin provides good conductivity and corrosion resistance, ensuring reliable performance and longevity of the amplifier.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Designed for narrow band high power applications, this amplifier delivers concentrated power output within a specific frequency range for increased efficiency.

Characteristic Impedance: 50 ohm

Matching the impedance of the amplifier to the system components ensures optimal power transfer and minimal signal reflection, maintaining signal integrity.

Gain: 28.5 dB

The high gain amplifies the input signal with minimal distortion, resulting in a stronger output signal for improved performance.

Minimum Operating Frequency: 1880 MHz

Operating at a low frequency of 1880 MHz allows for compatibility with a wide range of RF and microwave systems, making this amplifier versatile for various applications.

Maximum Operating Frequency: 2100 MHz

With a high maximum operating frequency of 2100 MHz, this amplifier can handle data transmission and signals within this range with precision and accuracy.

Technical Specifications

RF & Microwave Amplifiers MD7IC2050NBR1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

USABLE AT 1750 TO 2050 MHZ

Characteristic Impedance:

50 ohm

Construction:

MODULE

Gain:

28.5 dB

Maximum Input Power (CW):

28 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

2100 MHz

Minimum Operating Frequency:

1880 MHz

RF or Microwave Device Type:

Terminal Finish:

Matte Tin (Sn)

Maximum Voltage Standing Wave Ratio:

5

Trade Compliance

MD7IC2050NBR1 RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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