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EC103D1T/R

NXP Semiconductors

EC103D1T/R by NXP Semiconductors

EC103D1T/R by NXP Semiconductors is a reliable SCR with a max on-state voltage of 1.35 V and can handle up to 9 A peak current. It operates efficiently in temperatures from -40 °C to 150 °C, making it ideal for power control applications. Its low gate trigger current of just 0.012 mA ensures minimal energy loss.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,784 parts In-Stock

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Digiode

USA . 2,313 parts In-Stock

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Anansix

USA . 2,162 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 368 parts In-Stock

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$1.450

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Northwest PG Solutions

USA . 86 parts In-Stock

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$1.595

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One Stop Electronics

USA . 264 parts In-Stock

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$7.100

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Corphita

USA . 4,144 parts In-Stock

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UNI Independent Distributors

Spain . 47 parts In-Stock

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Overview

Unlock unparalleled performance with the EC103D1T/R from NXP Semiconductors, a leader in innovation and quality. This Silicon Controlled Rectifier is engineered for reliability and efficiency in demanding applications, from power management to motor control. With outstanding thermal stability and minimal leakage, it ensures long-lasting functionality. Choose NXP for superior products that enhance your designs and drive success, empowering you to achieve your goals effortlessly!

Feature Benefit Bullets

Maximum On-state Voltage: 1.35 V

A low on-state voltage ensures minimal power loss and increased efficiency in circuit designs.

Maximum DC Gate Trigger Current: 0.012 mA

This low gate trigger current allows for easy control with minimal power requirements, making it suitable for sensitive applications.

Non Repetitive Peak On-state Current: 9 A

The ability to handle high current levels reduces the need for frequent replacements in high-power applications.

Maximum On-state Current: 0.5 A

This rating allows for effective switching in low to moderate power applications, ensuring reliability.

Maximum Leakage Current: 0.1 mA

Low leakage current helps improve energy efficiency and minimizes unwanted power dissipation.

Maximum Operating Temperature: 150 °C

A high operational temperature range makes this SCR suitable for demanding environments without compromising performance.

Trigger Device Type: SCR

As an SCR, this product is well-suited for controlling electrical power and can handle substantial voltage and current loads effectively.

Minimum Operating Temperature: -40 °C

The capability to operate in extreme cold conditions increases versatility and reliability in various applications.

Maximum DC Gate Trigger Voltage: 0.8 V

This low gate trigger voltage helps in minimizing power demand during the triggering process.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating enables use in high-voltage applications, ensuring robust performance.

Maximum Holding Current: 5 mA

A low holding current allows for stable operation without the risk of accidental turn-on, enhancing reliability.

Nominal Circuit Commutated Turn-off Time: 100 µs

Fast turn-off time provides effective control in switching applications, improving overall circuit efficiency.

Technical Specifications

Silicon Controlled Rectifiers (SCR) EC103D1T/R attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from NXP Semiconductors

Specs

Nominal Circuit Commutated Turn-off Time:

100 us

Maximum DC Gate Trigger Current:

.012 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

9 A

Maximum On-state Voltage:

1.35 V

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Trigger Device Type:

SCR

Trade Compliance

EC103D1T/R Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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