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EC103D1,412

NXP Semiconductors

EC103D1,412 by NXP Semiconductors

EC103D1,412 by NXP Semiconductors is a Silicon Controlled Rectifier with max on-state voltage of 1.35V and max DC gate trigger current of 0.012mA. It operates b/w -40 to 125°C, making it suitable for various applications requiring precise control over electrical currents.

Median Price

$0.340

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 9,695 parts In-Stock

1+ parts

$0.560

100+ parts

$0.220

1k+ parts

$0.133

10k+ parts

$0.107

9,695

$0.560

$0.220

$0.133

$0.107

DigiKey

USA . 9,610 parts In-Stock

1+ parts

$0.560

100+ parts

$0.219

1k+ parts

$0.148

10k+ parts

$0.117

9,610

$0.560

$0.219

$0.148

$0.117

Verical

USA . 5,000 parts In-Stock

1+ parts

-

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$0.111

5,000

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$0.111

Rochester

USA . 5,000 parts In-Stock

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-

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$0.120

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$0.100

10k+ parts

$0.089

5,000

-

$0.120

$0.100

$0.089

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 1,304 parts In-Stock

1+ parts

$0.190

100+ parts

$0.095

1k+ parts

$0.073

10k+ parts

$0.068

1,304

$0.190

$0.095

$0.073

$0.068

Digiode

USA . 1,938 parts In-Stock

1+ parts

$0.390

100+ parts

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1,938

$0.390

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Vyrian

USA . 1,864 parts In-Stock

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$0.410

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1,864

$0.410

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NAC Semi

USA . 15,000 parts In-Stock

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$0.068

15,000

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$0.068

Anansix

USA . 1,731 parts In-Stock

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1,731

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Distributors (Availability)

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Corphita

USA . 344 parts In-Stock

1+ parts

$0.369

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344

$0.369

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Native Components

USA . 485 parts In-Stock

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$0.860

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485

$0.860

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Northwest PG Solutions

USA . 2,199 parts In-Stock

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$0.946

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2,199

$0.946

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QUARKTWIN TECHNOLOGY LTD

USA . 14,302 parts In-Stock

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14,302

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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UNI Independent Distributors

Spain . 5,432 parts In-Stock

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Eastek

USA . 5,000 parts In-Stock

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GreenTree Electronics

Israel . 5,000 parts In-Stock

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Overview

Discover the EC103D1,412 by NXP Semiconductors, a top-of-the-line Silicon Controlled Rectifier designed for high-performance applications. With a maximum on-state voltage of 1.35 V and a non-repetitive peak on-state current of 9 A, this SCR offers unparalleled reliability and efficiency. Ideal for a wide range of industries, from automotive to industrial automation, the EC103D1,412 delivers exceptional value and benefits to customers seeking quality components for their projects. Trust NXP Semiconductors for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Maximum On-state Voltage: 1.35 V

Low on-state voltage helps in reducing power losses and improving efficiency.

Maximum DC Gate Trigger Current: 0.012 mA

Low gate trigger current ensures reliable and efficient operation of the SCR.

Non Repetitive Peak On-state Current: 9 A

High peak on-state current capability allows the SCR to handle high current loads.

Maximum On-state Current: 0.5 A

Sufficient on-state current rating for many applications requiring controlled switching.

Maximum Leakage Current: 0.1 mA

Low leakage current ensures minimal power loss when the SCR is in the off state.

Maximum Operating Temperature: 125 °C

Wide operating temperature range makes the SCR suitable for various industrial environments.

Trigger Device Type: SCR

SCR technology is known for its reliability and ruggedness in high-power applications.

Maximum DC Gate Trigger Voltage: 0.8 V

Low gate trigger voltage ensures efficient turn-on of the SCR.

Repetitive Peak Off-state Voltage: 400 V

High off-state voltage rating allows the SCR to withstand high voltage transients.

Maximum Holding Current: 5 mA

Sufficient holding current capability to keep the SCR latched in the on state.

Nominal Circuit Commutated Turn-off Time: 100 us

Fast turn-off time allows for quick and precise control of the SCR.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand high reflow temperatures for a short duration, ensuring robustness during manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures the SCR can withstand temperature stress during assembly.

Technical Specifications

Silicon Controlled Rectifiers (SCR) EC103D1,412 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from NXP Semiconductors

Specs

Nominal Circuit Commutated Turn-off Time:

100 us

Maximum DC Gate Trigger Current:

.012 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

9 A

Maximum On-state Voltage:

1.35 V

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Peak Reflow Temperature (C):

260

Repetitive Peak Off-state Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

EC103D1,412 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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