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EC103D1,116

NXP Semiconductors

EC103D1,116 by NXP Semiconductors

EC103D1,116 by NXP Semiconductors is a single SCR with max DC gate trigger current of 12A. It has a non-repetitive peak on-state current of 9A and max RMS on-state current of 0.8A. This silicon controlled rectifier is used in applications requiring high power switching capabilities at temperatures ranging from -40 to 150°C.

Median Price

$0.560

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 4,482 parts In-Stock

1+ parts

$0.560

100+ parts

$0.230

1k+ parts

$0.147

10k+ parts

$0.102

4,482

$0.560

$0.230

$0.147

$0.102

Distributors (In-Stock)

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Digiode

USA . 3,913 parts In-Stock

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$0.390

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-

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3,913

$0.390

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Vyrian

USA . 2,802 parts In-Stock

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$0.410

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Anansix

USA . 1,482 parts In-Stock

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1,482

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Distributors (Availability)

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Corphita

USA . 4,878 parts In-Stock

1+ parts

$0.369

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$0.369

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Component Stockers USA

USA . 3,484 parts In-Stock

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$0.420

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$0.340

1k+ parts

$0.190

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-

3,484

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$0.190

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Microchip USA

USA . 2,256 parts In-Stock

1+ parts

$0.629

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2,256

$0.629

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Native Components

USA . 807 parts In-Stock

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$1.870

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807

$1.870

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Northwest PG Solutions

USA . 2,333 parts In-Stock

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$2.057

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2,333

$2.057

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QUARKTWIN TECHNOLOGY LTD

USA . 22,015 parts In-Stock

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UNI Independent Distributors

Spain . 5,378 parts In-Stock

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Overview

Upgrade your electronics with the EC103D1,116 from NXP Semiconductors! As a leader in semiconductor technology, NXP delivers quality products that are reliable and high-performing. The EC103D1,116 is a Silicon Controlled Rectifier (SCR) that offers versatility in various applications. With a maximum DC Gate Trigger Current of 12000 mA and a non-repetitive peak on-state current of 9 A, this SCR provides exceptional value and benefits to customers looking for a dependable component for their projects. Trust NXP Semiconductors for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protects the internal components of the SCR, making it suitable for various industrial applications.

Maximum DC Gate Trigger Current: 12000 mA

With a high gate trigger current, this SCR can handle large currents with ease, making it ideal for high-power applications.

Configuration: SINGLE

The single configuration simplifies the installation process and ensures easy integration into circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this SCR can withstand harsh environmental conditions without compromising performance.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows for reliable operation in both hot and cold environments.

Technical Specifications

Silicon Controlled Rectifiers (SCR) EC103D1,116 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from NXP Semiconductors

Specs

Nominal Circuit Commutated Turn-off Time:

100 us

Configuration:

Maximum DC Gate Trigger Current:

12000 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

5 mA

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

9 A

No. of Elements:

1

No. of Terminals:

3

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum RMS On-state Current:

.8 A

Repetitive Peak Off-state Voltage:

400 V

Repetitive Peak Reverse Voltage:

400 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trigger Device Type:

SCR

Trade Compliance

EC103D1,116 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.30.00.80

SB

8541.30.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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