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CGY1043

NXP Semiconductors

CGY1043 by NXP Semiconductors

CGY1043 by NXP Semiconductors is a narrow band high power RF amplifier module with a gain of 23 dB. It operates b/w 40 MHz and 1003 MHz, suitable for applications in telecommunications. With a temp range of -20 °C to 100 °C, it ensures reliability in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,374 parts In-Stock

1+ parts

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4,374

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Vyrian

USA . 3,771 parts In-Stock

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3,771

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Anansix

USA . 1,622 parts In-Stock

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1,622

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 746 parts In-Stock

1+ parts

$10.329

100+ parts

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746

$10.329

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Northwest PG Solutions

USA . 1,173 parts In-Stock

1+ parts

$11.362

100+ parts

$10.225

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1,173

$11.362

$10.225

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One Stop Electronics

USA . 216 parts In-Stock

1+ parts

$26.000

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216

$26.000

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UNI Independent Distributors

Spain . 8,167 parts In-Stock

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8,167

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Corphita

USA . 3,087 parts In-Stock

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3,087

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Kepictronics

USA . 550 parts In-Stock

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550

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Overview

Elevate your RF applications with the CGY1043 from NXP Semiconductors, a leader in innovative technology. Designed for high performance and reliability, this narrow-band high-power amplifier excels across a wide frequency range, delivering exceptional gain and efficiency. Its premium construction ensures durability even in demanding environments, making it perfect for telecommunications, broadcasting, and other critical sectors. Trust NXP’s commitment to quality and experience unparalleled value and performance!

Feature Benefit Bullets

Construction: MODULE

The modular construction allows for easy integration into existing systems and simplifies maintenance and upgrades.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this amplifier is suitable for a wide range of environments, ensuring reliability in high-temperature situations.

Minimum Operating Temperature: -20 °C

The ability to operate down to -20 °C makes this amplifier versatile for use in colder climates, enhancing its application range.

Terminal Finish: GOLD

Gold terminals provide excellent conductivity and resistance to corrosion, ensuring a longer lifespan and stable performance of the amplifier.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow band high power device indicates that this amplifier is optimized for specific frequency applications, resulting in improved performance and efficiency.

Characteristic Impedance: 75 ohm

The characteristic impedance of 75 ohm is standard for many RF applications, making this product compatible with a wide range of existing systems.

Gain: 23 dB

A gain of 23 dB means this amplifier effectively boosts signal strength, making it suitable for applications requiring strong signal transmission.

Minimum Operating Frequency: 40 MHz

With a minimum operating frequency of 40 MHz, this amplifier can handle low-frequency signals, making it ideal for a variety of RF applications.

Maximum Operating Frequency: 1003 MHz

The ability to operate up to 1003 MHz allows this amplifier to cover a broad range of microwave applications, increasing its utility and versatility.

Technical Specifications

RF & Microwave Amplifiers CGY1043 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

23 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

1003 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

RF or Microwave Device Type:

Terminal Finish:

GOLD

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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