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CGY1041

NXP Semiconductors

CGY1041 by NXP Semiconductors

CGY1041 by NXP Semiconductors is a narrow band high power RF amplifier module with a gain of 21 dB. It operates b/w 40 MHz and 1003 MHz, functioning effectively in temperatures from -20 °C to 100 °C. Ideal for RF applications requiring robust performance and reliability.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,395 parts In-Stock

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4,395

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Digiode

USA . 789 parts In-Stock

1+ parts

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789

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Anansix

USA . 681 parts In-Stock

1+ parts

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100+ parts

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681

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Cyclops Electronics Ltd

UK . 41 parts In-Stock

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41

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 147 parts In-Stock

1+ parts

$6.030

100+ parts

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147

$6.030

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One Stop Electronics

USA . 697 parts In-Stock

1+ parts

$7.000

100+ parts

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697

$7.000

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UNI Independent Distributors

Spain . 5,628 parts In-Stock

1+ parts

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5,628

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Corphita

USA . 4,126 parts In-Stock

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4,126

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Northwest PG Solutions

USA . 1,416 parts In-Stock

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100+ parts

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1k+ parts

$5.909

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1,416

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$5.909

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Overview

Elevate your RF applications with the CGY1041 from NXP Semiconductors, a trusted name in innovation. This narrow-band high-power amplifier excels in delivering robust performance across a wide frequency range, ensuring seamless connectivity and superior signal quality. With its reliable construction and impressive thermal resilience, the CGY1041 is perfect for demanding environments. Experience enhanced efficiency and longevity, making it an invaluable asset for any project. Choose excellence; choose CGY1041.

Feature Benefit Bullets

Construction: MODULE

The module construction enhances durability and reliability, making it suitable for complex RF and microwave applications.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature allows the amplifier to function effectively in demanding environments, ensuring robust performance.

Minimum Operating Temperature: -20 °C

The ability to operate at low temperatures ensures versatility, enabling applications in a wide range of climates.

Terminal Finish: GOLD

Gold terminal finish provides excellent conductivity and corrosion resistance, improving longevity and reliability of connections.

RF or Microwave Device Type: NARROW BAND HIGH POWER

This classification indicates the amplifier is tailored for high-power applications, making it ideal for precise RF communications.

Characteristic Impedance: 75 ohm

The 75 ohm impedance is standard for professional broadcasting and telecommunications, ensuring compatibility with a variety of systems.

Gain: 21 dB

A gain of 21 dB signifies a strong signal amplification capability, enhancing overall system performance in signal transmission.

Minimum Operating Frequency: 40 MHz

Starting at 40 MHz, this amplifier can cover a broad spectrum of RF applications, providing flexibility for various use cases.

Maximum Operating Frequency: 1003 MHz

With a maximum frequency of 1003 MHz, it caters to a wide range of microwave applications, ensuring it meets advanced communication needs.

Technical Specifications

RF & Microwave Amplifiers CGY1041 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

21 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

1003 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

RF or Microwave Device Type:

Terminal Finish:

GOLD

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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