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CGY1049

NXP Semiconductors

CGY1049 by NXP Semiconductors

CGY1049 by NXP Semiconductors is a narrow band high power RF amplifier module with a gain of 29 dB. It operates b/w 40 MHz and 1003 MHz, suitable for applications in telecommunications. With a temp range of -20 °C to 100 °C, it ensures reliability in diverse environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,233 parts In-Stock

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Vyrian

USA . 2,214 parts In-Stock

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2,214

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Anansix

USA . 1,968 parts In-Stock

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1,968

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One Stop Electronics

USA . 893 parts In-Stock

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$4.000

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893

$4.000

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UNI Independent Distributors

Spain . 3,259 parts In-Stock

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3,259

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Northwest PG Solutions

USA . 1,128 parts In-Stock

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Native Components

USA . 957 parts In-Stock

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957

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Corphita

USA . 299 parts In-Stock

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299

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Overview

Unlock exceptional performance with the CGY1049 from NXP Semiconductors, a leader in innovative RF solutions. This high-power amplifier is designed for superior reliability across diverse applications, ensuring your projects thrive even in extreme conditions. With its 29 dB gain and robust construction, the CGY1049 provides unparalleled signal clarity and strength, empowering your connectivity like never before. Experience the difference that quality engineering makes!

Feature Benefit Bullets

Construction: MODULE

The module construction provides a compact design, making it ideal for space-constrained applications.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this amplifier ensures reliable performance even in demanding environments.

Minimum Operating Temperature: -20 °C

A wide minimum operating temperature range allows this product to function effectively in various temperature conditions.

Terminal Finish: GOLD

Gold terminal finish ensures excellent conductivity and corrosion resistance, leading to improved longevity and performance.

RF or Microwave Device Type: NARROW BAND HIGH POWER

As a narrow band high power device, it is optimized for applications requiring focused signal amplification, enhancing efficiency.

Characteristic Impedance: 75 ohm

Designed with a 75 ohm impedance, this amplifier is suitable for broadcast and communication applications, ensuring minimal signal reflection.

Gain: 29 dB

The high gain of 29 dB enables significant signal amplification, making it perfect for enhancing weak signals in various applications.

Minimum Operating Frequency: 40 MHz

With a minimum operating frequency of 40 MHz, the amplifier is versatile for a range of RF applications, catering to various industry needs.

Maximum Operating Frequency: 1003 MHz

Operating effectively up to 1003 MHz, this amplifier covers a wide frequency spectrum, making it ideal for modern communication systems.

Technical Specifications

RF & Microwave Amplifiers CGY1049 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

29 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

1003 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

RF or Microwave Device Type:

Terminal Finish:

GOLD

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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