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CGY1032

NXP Semiconductors

CGY1032 by NXP Semiconductors

CGY1032 by NXP Semiconductors is a narrow band high power RF amplifier module with a gain of 32 dB. It operates b/w 40 MHz and 1003 MHz, suitable for applications in telecommunications. With a temp range of -20 °C to 100 °C, it ensures reliability in various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,975 parts In-Stock

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Anansix

USA . 2,769 parts In-Stock

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Vyrian

USA . 2,745 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 83 parts In-Stock

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$1.622

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83

$1.622

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Northwest PG Solutions

USA . 1,042 parts In-Stock

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$1.784

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1,042

$1.784

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One Stop Electronics

USA . 747 parts In-Stock

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$28.000

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747

$28.000

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UNI Independent Distributors

Spain . 7,518 parts In-Stock

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Corphita

USA . 4,716 parts In-Stock

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Overview

Elevate your RF applications with the CGY1032 module from NXP Semiconductors, renowned for its quality and innovation. Designed for narrowband high-power use, this amplifier ensures exceptional performance across a wide frequency range, delivering a robust gain of 32 dB. With superior thermal stability and gold terminal finish, it promises reliability in demanding conditions. Trust in NXP’s legacy of excellence to enhance your projects and achieve unparalleled results.

Feature Benefit Bullets

Construction: MODULE

The module construction ensures compactness and ease of integration into various applications, making it ideal for space-constrained environments.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this amplifier can withstand demanding thermal conditions, making it suitable for industrial and outdoor applications.

Minimum Operating Temperature: -20 °C

Operating efficiently in low temperatures, this product can be deployed in a variety of environments, including colder climates.

Terminal Finish: GOLD

Gold terminal finish enhances corrosion resistance and provides excellent conductivity, ensuring reliable performance and longevity of the product.

RF or Microwave Device Type: NARROW BAND HIGH POWER

Being a narrow band high power amplifier, it offers superior performance for applications requiring high gain and minimal distortion within a specific frequency range.

Characteristic Impedance: 75 ohm

The 75 ohm impedance is standard for many RF applications, ensuring compatibility with a wide range of RF systems and components.

Gain: 32 dB

A gain of 32 dB provides significant amplification, making it suitable for applications where signal strength enhancement is crucial.

Minimum Operating Frequency: 40 MHz

With the ability to operate down to 40 MHz, this amplifier can be used in numerous RF communication and broadcast applications.

Maximum Operating Frequency: 1003 MHz

Operating up to 1003 MHz allows it to handle a wide range of microwave signals, making it versatile for various applications including telecom and satellite communications.

Technical Specifications

RF & Microwave Amplifiers CGY1032 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE, HIGH RELIABILITY

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

32 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

1003 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

RF or Microwave Device Type:

Terminal Finish:

GOLD

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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