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BSD22

NXP Semiconductors

BSD22 by NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .23 W; Maximum Operating Temperature: 125 Cel; Package Body Material: PLASTIC/EPOXY;

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,690 parts In-Stock

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Digiode

USA . 2,276 parts In-Stock

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Anansix

USA . 1,507 parts In-Stock

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Component Sense

UK . 1,463 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,310 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,379 parts In-Stock

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$39.050

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,633 parts In-Stock

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UNI Independent Distributors

Spain . 2,649 parts In-Stock

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Corphita

USA . 1,903 parts In-Stock

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Northwest PG Solutions

USA . 1,376 parts In-Stock

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Native Components

USA . 906 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) BSD22 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SUBSTRATE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (Abs) (ID):

.05 A

Maximum Drain Current (ID):

.05 A

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSD22 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-457-9884, 5961014579884

NIIN

014579884

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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