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BSD22-TAPE-7

NXP Semiconductors

BSD22-TAPE-7 by NXP Semiconductors

BSD22-TAPE-7 from NXP is an N-channel FET designed for switching applications, featuring a max drain current of 0.05 A and a breakdown voltage of 20 V. It operates in depletion mode with a compact SO package and gull-wing terminals. Ideal for surface mount designs, it withstands temps up to 125 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,997 parts In-Stock

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Vyrian

USA . 1,733 parts In-Stock

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Anansix

USA . 334 parts In-Stock

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One Stop Electronics

USA . 1,132 parts In-Stock

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$42.050

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UNI Independent Distributors

Spain . 3,607 parts In-Stock

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Corphita

USA . 1,930 parts In-Stock

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Northwest PG Solutions

USA . 1,313 parts In-Stock

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Native Components

USA . 596 parts In-Stock

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Overview

Unlock the potential of your designs with the BSD22-TAPE-7 from NXP Semiconductors, a leader in semiconductor innovation. This high-quality N-channel FET seamlessly combines reliability and efficiency, making it ideal for various switching applications. Its compact surface mount design ensures easy integration into your projects while delivering superior performance at elevated temperatures. Elevate your solutions with NXP’s trusted technology and experience unmatched value and reliability!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material ensures durability and resistance to environmental stress, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are typically more efficient in conducting current, which can lead to improved performance in switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The inclusion of a built-in diode enhances versatility by providing protection against reverse polarity, facilitating safer operation in circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET ensures fast operation and efficiency, which is essential for digital and power management circuits.

Surface Mount: YES

The surface mount capability allows for compact PCB designs, enabling manufacturers to save space and improve assembly efficiency.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20V allows for the safe operation in circuits with moderate voltage levels, making it a reliable choice for consumer electronics.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout on PCBs, optimizing space and reducing manufacturing complexity.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering strength and reliability, ensuring dependable connections in high-performance applications.

Operating Mode: DEPLETION MODE

Depletion mode operation allows for control of current without requiring a constant gate voltage, giving designers more flexibility in circuit design.

No. of Terminals: 4

The 4-terminal configuration simplifies connection in circuits, enabling straightforward integration in compact designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces PCB footprint, which is beneficial in space-constrained applications such as portable electronics.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high input impedance and low power consumption, making it ideal for low-power switching applications.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C ensures reliability in high-temperature environments, extending the range of applications.

Transistor Element Material: SILICON

Silicon material provides excellent electrical properties and stability, making this FET suitable for a wide range of electronic applications.

Maximum Drain Current (ID): 0.05 A

With a maximum drain current of 0.05 A, this FET is suitable for low to moderate power applications, ensuring efficiency and longevity.

Maximum Drain-Source On Resistance: 50 ohm

Low on-resistance minimizes power loss during operation, making the FET efficient for switching and amplification in circuits.

Terminal Position: DUAL

Dual terminal positions facilitate easy integration into circuit designs and provide flexibility for layout configurations.

Case Connection: SUBSTRATE

Substrate case connection enhances thermal management, promoting better heat dissipation and reliability in high-performance scenarios.

Technical Specifications

Small Signal Field Effect Transistors (FET) BSD22-TAPE-7 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SUBSTRATE

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.05 A

Maximum Drain-Source On Resistance:

50 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BSD22-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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