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BGU6005/N2

NXP Semiconductors

BGU6005/N2 by NXP Semiconductors

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Screening Level: IEC-60134; Maximum Operating Frequency: 1610 MHz;

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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PC Components Company LLC

USA . 1,910 parts In-Stock

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1,910

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Bristol Electronics

USA . 1,910 parts In-Stock

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1,910

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Anansix

USA . 984 parts In-Stock

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984

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Digiode

USA . 320 parts In-Stock

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320

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Vyrian

USA . 84 parts In-Stock

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84

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 61 parts In-Stock

1+ parts

$1.370

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61

$1.370

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Northwest PG Solutions

USA . 1,060 parts In-Stock

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$1.507

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$1.507

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One Stop Electronics

USA . 1,618 parts In-Stock

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$6.000

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$6.000

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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UNI Independent Distributors

Spain . 7,600 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,652 parts In-Stock

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Kepictronics

USA . 4,088 parts In-Stock

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Corphita

USA . 3,991 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,768 parts In-Stock

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3,768

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Technical Specifications

RF & Microwave Amplifiers BGU6005/N2 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

17.5 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Frequency:

1610 MHz

Minimum Operating Frequency:

1559 MHz

Maximum Operating Temperature:

150 Cel

Package Body Material:

Package Equivalence Code:

SOLCC6,.04,20

Power Supplies (V):

1.8/2.85

RF or Microwave Device Type:

Screening Level:

Terminal Finish:

Tin (Sn)

Maximum Voltage Standing Wave Ratio:

1.43

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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