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BGU6101

NXP Semiconductors

BGU6101 by NXP Semiconductors

BGU6101 by NXP Semiconductors is a wideband low-power RF amplifier with a gain of 4 dB, operating b/w 40 MHz and 4000 MHz. It functions effectively in temperatures from -40 °C to 85 °C. Ideal for various RF applications, it features a durable tin terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,228 parts In-Stock

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Digiode

USA . 838 parts In-Stock

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Anansix

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One Stop Electronics

USA . 1,415 parts In-Stock

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UNI Independent Distributors

Spain . 2,278 parts In-Stock

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Northwest PG Solutions

USA . 823 parts In-Stock

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Native Components

USA . 619 parts In-Stock

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Corphita

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Perfect Parts

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Overview

Unlock the potential of your designs with the BGU6101 from NXP Semiconductors, a trusted name in RF & microwave technology. This wide-band low-power amplifier delivers exceptional performance across a vast frequency range, ensuring robust signal quality in various applications. With a reliable operating temperature from -40 °C to 85 °C, the BGU6101 is engineered for durability, providing you with unmatched value and peace of mind. Experience superior efficiency and enhanced connectivity that elevate your projects to new heights!

Feature Benefit Bullets

Construction: COMPONENT

This construction ensures durability and reliability, making the amplifier suitable for various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature allows the amplifier to function effectively in demanding environments.

Minimum Operating Temperature: -40 °C

With a low minimum operating temperature, this amplifier is capable of performing in extreme cold conditions.

Terminal Finish: Tin (Sn)

The tin finish provides good corrosion resistance, enhancing the lifespan and performance of the amplifier.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wideband low-power device makes it versatile for a variety of RF applications while minimizing power consumption.

Gain: 4 dB

A gain of 4 dB strikes a balance between performance and efficiency, suitable for enhancing weak signals.

Minimum Operating Frequency: 40 MHz

This low minimum frequency extends the application range into various RF communication systems.

Maximum Operating Frequency: 4000 MHz

With a maximum frequency of 4000 MHz, this amplifier caters to modern RF and microwave applications, ensuring high versatility.

Technical Specifications

RF & Microwave Amplifiers BGU6101 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Construction:

COMPONENT

Gain:

4 dB

JESD-609 Code:

e3

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin (Sn)

Trade Compliance

BGU6101 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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