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BGU6102

NXP Semiconductors

BGU6102 by NXP Semiconductors

BGU6102 by NXP Semiconductors is a wideband low-power RF amplifier with a gain of 5.5 dB, operating b/w 40 MHz and 4 GHz. It withstands temperatures from -40 °C to 85 °C and features a 50-ohm impedance. Ideal for various RF applications, it ensures reliable performance in diverse environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 4,990 parts In-Stock

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4,990

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Vyrian

USA . 4,810 parts In-Stock

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4,810

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Digiode

USA . 2,773 parts In-Stock

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2,773

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Anansix

USA . 2,043 parts In-Stock

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2,043

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 304 parts In-Stock

1+ parts

$8.699

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304

$8.699

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Northwest PG Solutions

USA . 627 parts In-Stock

1+ parts

$9.569

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$8.612

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627

$9.569

$8.612

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One Stop Electronics

USA . 745 parts In-Stock

1+ parts

$39.000

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745

$39.000

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UNI Independent Distributors

Spain . 7,702 parts In-Stock

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7,702

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Corphita

USA . 1,732 parts In-Stock

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1,732

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Overview

Unlock superior performance with the BGU6102 from NXP Semiconductors, a leader in innovation and quality. This wideband low-power RF amplifier excels in diverse applications, ensuring reliable connectivity even in extreme temperatures. With unmatched gain and efficiency, it delivers exceptional value for your projects, enhancing signal integrity while minimizing power consumption. Trust NXP to elevate your designs and drive your success!

Feature Benefit Bullets

Construction: COMPONENT

The component construction ensures durability and reliability, making it suitable for various applications.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature indicates the amplifier can perform in demanding environments without overheating.

Minimum Operating Temperature: -40 °C

This wide temperature range allows the amplifier to be used in extreme conditions, enhancing its versatility.

Terminal Finish: Tin (Sn)

The tin finish offers good corrosion resistance, ensuring longevity and stability of connections.

RF or Microwave Device Type: WIDE BAND LOW POWER

Wideband capability along with low power consumption makes the amplifier efficient for a range of applications.

Characteristic Impedance: 50 ohm

The standard 50 ohm impedance is widely used in RF applications, ensuring compatibility with various systems.

Gain: 5.5 dB

A gain of 5.5 dB provides sufficient amplification for low signal levels, making it useful in signal boosting applications.

Minimum Operating Frequency: 40 MHz

Starting from 40 MHz allows this amplifier to be used in a wide range of RF frequencies, enhancing its applicability.

Maximum Operating Frequency: 4000 MHz

Operating up to 4000 MHz ensures that the amplifier can handle high-frequency signals, making it suitable for modern communication systems.

Technical Specifications

RF & Microwave Amplifiers BGU6102 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

5.5 dB

JESD-609 Code:

e3

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Tin (Sn)

Trade Compliance

BGU6102 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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