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BGD704/09,112

NXP Semiconductors

BGD704/09,112 by NXP Semiconductors

BGD704/09,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max current of 435mA and withstands temperatures from -20 °C to 100 °C. Ideal for demanding RF & microwave tasks in various industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Anansix

USA . 957 parts In-Stock

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957

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Digiode

USA . 416 parts In-Stock

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416

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Vyrian

USA . 258 parts In-Stock

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258

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One Stop Electronics

USA . 215 parts In-Stock

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$39.000

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215

$39.000

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Native Components

USA . 48 parts In-Stock

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$77.857

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$74.743

48

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$74.743

Northwest PG Solutions

USA . 1,288 parts In-Stock

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$85.643

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1,288

$85.643

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QUARKTWIN TECHNOLOGY LTD

USA . 26,108 parts In-Stock

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UNI Independent Distributors

Spain . 5,534 parts In-Stock

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Microchip USA

USA . 4,476 parts In-Stock

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Corphita

USA . 2,498 parts In-Stock

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2,498

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Overview

Elevate your projects with the BGD704/09,112 from NXP Semiconductors, a leader in innovative RF & Microwave Amplifiers. This robust amplifier delivers exceptional performance across diverse applications, ensuring reliability in demanding environments. With its superior hybrid technology and wide operating temperature range, it promises consistent quality and efficiency. Count on NXP to provide solutions that enhance your designs, maximizing value and driving success in every communication endeavor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material offers durability and resistance to environmental factors, making this amplifier suitable for a variety of applications.

Power Supplies (V): 24

A 24V power supply allows for efficient performance in RF and microwave applications, providing adequate power for high gain and output levels.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this amplifier can handle high thermal loads, ensuring reliable performance in demanding environments.

Minimum Operating Temperature: -20 °C

A minimum operating temperature of -20 °C allows this product to function in a wide range of climates, ideal for outdoor or industrial applications.

Technology: HYBRID

Hybrid technology combines the benefits of both discrete and integrated components, providing enhanced performance, efficiency, and flexibility.

Maximum Supply Current: 435 mA

A maximum supply current of 435 mA ensures robust performance while maintaining energy efficiency, making this amplifier suitable for a range of power-sensitive applications.

Technical Specifications

RF & Microwave Amplifiers BGD704/09,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

435 mA

Technology:

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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