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74LVC1G32GW,165

NXP Semiconductors

74LVC1G32GW,165 by NXP Semiconductors

74LVC1G32GW,165 by NXP Semiconductors is a CMOS Logic Gate with 2 inputs and propagation delay of 6 ns at 1.8V. It operates in a temperature range from -40 to 125 °C and has a max supply voltage of 5.5V. This small outline package is ideal for automotive applications requiring fast signal processing.

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Chip Stock

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Overview

Elevate your electronic designs with the 74LVC1G32GW,165 by NXP Semiconductors. As a leader in semiconductor technology, NXP delivers top-quality logic gates that are essential for various applications. From automotive to consumer electronics, this product offers fast propagation delay and low power consumption. With a small outline package and durable construction, this logic gate is perfect for space-constrained designs. Trust NXP Semiconductors to provide reliable solutions for your projects. Upgrade your circuits today with the 74LVC1G32GW,165!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product easy to handle and resistant to damage.

Propagation Delay At Nominal Supply: 6 ns

Low propagation delay ensures quick response times in processing signals, making this product suitable for applications requiring high speed.

Surface Mount: YES

Being surface mountable allows for easy installation and integration into circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage of 1.8V helps in reducing power consumption and heat generation, making it energy-efficient.

Power Supplies (V): 3.3

Operating at a standard power supply voltage of 3.3V ensures compatibility with a wide range of electronic systems.

Maximum Seated Height: 1.1 mm

The low-profile design with a maximum seated height of 1.1mm allows for compact installations in space-constrained applications.

Technology: CMOS

Utilizing CMOS technology provides low power consumption, high noise immunity, and compatibility with a variety of digital systems.

Technical Specifications

Logic Gates 74LVC1G32GW,165 attributes and parameters. Explore more Logic Gates devices from NXP Semiconductors

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.05 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

6 ns

Propagation Delay (tpd):

10.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74LVC1G32GW,165 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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