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ESM3045D

North American Philips Discrete Products Div

ESM3045D by North American Philips Discrete Products Div

Power Bipolar Transistors; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 24 A; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Maximum VCEsat: 2 V;

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ECAB

Sweden . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Assy Fe

Spain . 37 parts In-Stock

1+ parts

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100+ parts

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37

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Technical Specifications

Power Bipolar Junction Transistors (BJT) ESM3045D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from North American Philips Discrete Products Div

Specs

Maximum Collector Current (IC):

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Maximum Power Dissipation (Abs):

Sub-Category:

BIP General Purpose Power

Maximum VCEsat:

2 V

Trade Compliance

ESM3045D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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