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PSMN013-100YSEX

Nexperia

PSMN013-100YSEX by Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 238 W; Maximum Pulsed Drain Current (IDM): 330 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

$0.883

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,312 parts In-Stock

1+ parts

$2.040

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$1.120

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$0.750

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$0.740

1,312

$2.040

$1.120

$0.750

$0.740

DigiKey

USA . 17,175 parts In-Stock

1+ parts

$2.630

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$1.157

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$0.927

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17,175

$2.630

$1.157

$0.927

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Mouser Electronics

USA . 6,605 parts In-Stock

1+ parts

$2.710

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$1.190

1k+ parts

$0.889

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$0.803

6,605

$2.710

$1.190

$0.889

$0.803

Rochester

USA . 9,600 parts In-Stock

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-

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$0.851

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$0.706

10k+ parts

$0.630

9,600

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$0.851

$0.706

$0.630

Verical

USA . 5,800 parts In-Stock

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$0.883

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$0.787

5,800

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$0.787

Arrow

USA . 1,500 parts In-Stock

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$0.720

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Chip1Stop

Japan . 1,500 parts In-Stock

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$0.804

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$0.804

Distributors (In-Stock)

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Nova Conductors

Japan . 35 parts In-Stock

1+ parts

$1.288

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$1.288

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Digiode

USA . 1,061 parts In-Stock

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$1.843

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$1.843

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Chip Stock

USA . 28,596 parts In-Stock

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Vyrian

USA . 7,085 parts In-Stock

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NAC Semi

USA . 3,000 parts In-Stock

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$1.170

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Component Sense

UK . 2,878 parts In-Stock

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Anansix

USA . 2,329 parts In-Stock

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Velocity Electronics

USA . 850 parts In-Stock

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850

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Bristol Electronics

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335

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Semicontronic

India . 8,262 parts In-Stock

1+ parts

$0.570

100+ parts

$0.556

1k+ parts

$0.553

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8,262

$0.570

$0.556

$0.553

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Aztec Data Supply Inc.

USA . 63 parts In-Stock

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$0.610

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63

$0.610

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AZTECH Wire

Italy . 2,839 parts In-Stock

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$0.870

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$0.870

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Continental Prestige Electronics

USA . 155 parts In-Stock

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$1.130

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$0.638

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$0.421

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155

$1.130

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$0.421

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Corohmni

South Africa . 633 parts In-Stock

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$1.210

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$1.210

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Ampacity Inc.

Singapore . 9,009 parts In-Stock

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$1.240

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$1.240

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$1.246

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$1.184

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$1.184

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$1.246

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$1.184

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Argo Parts USA

USA . 3,412 parts In-Stock

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$1.288

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Corphita

USA . 398 parts In-Stock

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$1.746

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Microchip USA

USA . 1,792 parts In-Stock

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$5.475

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Eastek

USA . 15,000 parts In-Stock

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$1.050

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Perfect Parts

USA . 13,480 parts In-Stock

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Robosynatics

Brazil . 12,334 parts In-Stock

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Lucentia Tech

USA . 12,334 parts In-Stock

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$1.186

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$1.162

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$1.162

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$1.162

UNI Independent Distributors

Spain . 6,720 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Supply Digital

USA . 2,617 parts In-Stock

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Kepictronics

USA . 140 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$1.262

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$1.224

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$1.198

50

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$1.262

$1.224

$1.198

Technical Specifications

Power Field Effect Transistors (FET) PSMN013-100YSEX attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nexperia

Specs

Avalanche Energy Rating (EAS):

125 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

82 A

Maximum Drain Current (ID):

82 A

Maximum Drain-Source On Resistance:

.013 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MO-235

JESD-30 Code:

R-PSSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

330 A

Reference Standard:

IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

63 ns

Maximum Turn On Time (ton):

39 ns

Trade Compliance

PSMN013-100YSEX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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