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Nexperia Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK9880-55/CUF by Nexperia

BUK9880-55/CUF

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; Maximum Pulsed Drain Current (IDM): 40 A; Reference Standard: AEC-Q101; IEC-60134;

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

7.5 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

40 A

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BUK7880-55/CUF by Nexperia

BUK7880-55/CUF

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): 7.5 A;

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

7.5 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G4

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

40 A

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BUK9C10-55BIT/A,11 by Nexperia

BUK9C10-55BIT/A,11

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSSO-G6; Terminal Position: SINGLE;

215 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR

55 V

75 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G6

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

401 A

AEC-Q101; IEC-60134

YES

GULL WING

SINGLE

SWITCHING

SILICON

PMPB15XPZ by Nexperia

PMPB15XPZ

Nexperia

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Reference Standard: IEC-60134; No. of Terminals: 6;

DRAIN

SINGLE WITH BUILT-IN DIODE

12 V

8.2 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

33 A

IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

PMPB95ENEA/FX by Nexperia

PMPB95ENEA/FX

Nexperia

Nexperia's PMPB95ENEA/FX is a N-CHANNEL FET with 80V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 11.2A IDM and 0.105 ohm Drain-Source Resistance, this ENHANCEMENT MODE transistor is surface mountable and AEC-Q101 certified.

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

2.8 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

11.2 A

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

PSMN012-100YLX by Nexperia

PSMN012-100YLX

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Transistor Application: SWITCHING; Terminal Form: GULL WING;

AVALANCHE RATED

139 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

85 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

MO-235

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

339 A

IEC-60134

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

PSMN8R0-80YLX by Nexperia

PSMN8R0-80YLX

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 80 V; JESD-30 Code: R-PSSO-G4; Maximum Time At Peak Reflow Temperature (s): 30;

AVALANCHE RATED

148 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

100 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

MO-235

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

423 A

IEC-60134

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK7K17-80EX by Nexperia

BUK7K17-80EX

Nexperia

Power Field-Effect Transistors; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;

e3

1

260

AEC-Q101

TIN

30

PSMN1R9-40YSDX by Nexperia

PSMN1R9-40YSDX

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 194 W; Maximum Drain-Source On Resistance: .0019 ohm; Avalanche Energy Rating (EAS): 905 mJ;

AVALANCHE RATED, HIGH RELIABILITY

905 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

200 A

.0019 ohm

METAL-OXIDE SEMICONDUCTOR

414 pF

MO-235

R-PSSO-G4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

194 W

919 A

IEC-60134

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

BUK9Y1R6-40HX by Nexperia

BUK9Y1R6-40HX

Nexperia

Power Field-Effect Transistors; Reference Standard: AEC-Q101; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

e3

1

260

AEC-Q101

TIN

30

PSMN2R0-60PSRQ by Nexperia

PSMN2R0-60PSRQ

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 338 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

HIGH RELIABILITY

913 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

120 A

120 A

.0022 ohm

METAL-OXIDE SEMICONDUCTOR

835 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

338 W

1135 A

IEC-60134

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

247 ns

147 ns

BUK6D38-30EX by Nexperia

BUK6D38-30EX

Nexperia

Nexperia's BUK6D38-30EX is a N-channel FET with 30V DS breakdown voltage, 68A IDM, and 0.038 ohm RDS(on). Ideal for switching applications in automotive electronics, it operates from -55 to 175 °C with a max power dissipation of 19W.

10 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

17 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

42 pF

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

19 W

68 A

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

PMPB12R5EPX by Nexperia

PMPB12R5EPX

Nexperia

The Nexperia PMPB12R5EPX is a P-channel FET with 30V DS breakdown voltage, 35A IDM, and 0.015 ohm RDS(on). Ideal for switching applications in small outline packages, it operates from -55 to 150°C. With drain connection and built-in diode, it's suitable for enhancement mode operation.

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

8.8 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

139 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

P-CHANNEL

12.5 W

35 A

IEC-60134

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

DUAL

SWITCHING

SILICON