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PMV100EPA

Nexperia

PMV100EPA by Nexperia

The Nexperia PMV100EPA is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 9A and EAS of 33mJ, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 175°C. This surface-mount transistor has a package style of SMALL OUTLINE and offers low on-resistance at 0.13 ohm.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

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Vyrian

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Nova Conductors

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Corohmni

South Africa . 13 parts In-Stock

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$0.525

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Aztec Data Supply Inc.

USA . 192 parts In-Stock

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AZTECH Wire

Italy . 14,716 parts In-Stock

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Ampacity Inc.

Singapore . 807 parts In-Stock

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RC Electronics

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Supply Digital

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Argo Parts USA

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Continental Prestige Electronics

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Overview

Experience the power and reliability of Nexperia with the PMV100EPA Power Field Effect Transistor. Designed for switching applications, this P-channel FET offers a built-in diode in a compact, surface-mount package. With a maximum drain current of 2.2A and a breakdown voltage of 60V, this transistor is ideal for enhancing performance in a variety of electronic devices. Trust Nexperia's expertise and quality to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection, making the product suitable for various environments.

Polarity or Channel Type: P-CHANNEL

P-channel FETs have lower resistance and better current-handling capabilities compared to N-channel, making them a better choice for certain applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse current flow, enhancing the overall efficiency of the system.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in controlling power flow.

Surface Mount: YES

Enables easy and efficient integration into circuit boards, saving space and facilitating automated assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, the FET can handle higher voltages without breakdown, ensuring reliable operation in demanding conditions.

Maximum Power Dissipation (Abs): 8.3 W

The FET can dissipate a significant amount of power without overheating, allowing for continuous operation under heavy loads.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures, making it suitable for industrial and automotive applications where heat dissipation is essential.

Maximum Drain-Source On Resistance: 0.13 ohm

Low on-resistance minimizes power loss and heat generation, improving efficiency in power management systems.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability, making it a trusted choice for various applications.

Technical Specifications

Power Field Effect Transistors (FET) PMV100EPA attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nexperia

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (EAS):

33 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

2.2 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

26 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

9 A

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV100EPA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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