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PMR290XN,115

Nexperia

PMR290XN,115 by Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;

Median Price

$0.232

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 150 parts In-Stock

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-

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$0.232

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$0.192

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$0.172

150

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$0.232

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$0.172

Distributors (In-Stock)

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Digiode

USA . 3,446 parts In-Stock

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$0.093

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Vyrian

USA . 3,932 parts In-Stock

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Anansix

USA . 2,544 parts In-Stock

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Nova Conductors

Japan . 89 parts In-Stock

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Ampacity Inc.

Singapore . 150 parts In-Stock

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$0.083

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Corphita

USA . 4,618 parts In-Stock

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$0.088

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Component Stockers USA

USA . 175 parts In-Stock

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$0.090

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Aztec Data Supply Inc.

USA . 61 parts In-Stock

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$1.101

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Corohmni

South Africa . 39 parts In-Stock

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$1.770

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AZTECH Wire

Italy . 9,297 parts In-Stock

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Kepictronics

USA . 71,800 parts In-Stock

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Metaverse IC Inc.

Canada . 65,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Continental Prestige Electronics

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UNI Independent Distributors

Spain . 4,384 parts In-Stock

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Argo Parts USA

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A-Z Elektronik GmbH

Germany . 3,500 parts In-Stock

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Supply Digital

USA . 1,124 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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Technical Specifications

Small Signal Field Effect Transistors (FET) PMR290XN,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Nexperia

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.97 A

Maximum Drain-Source On Resistance:

.35 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMR290XN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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