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PMR290UNE

NXP Semiconductors

PMR290UNE by NXP Semiconductors

PMR290UNE by NXP Semiconductors is an N-channel FET designed for switching applications. It features a 20V min DS breakdown voltage, 0.7A max drain current, and a low on-resistance of 0.38Ω. Ideal for compact electronic designs with surface mount capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 168,000 parts In-Stock

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Vyrian

USA . 5,129 parts In-Stock

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Digiode

USA . 2,058 parts In-Stock

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Anansix

USA . 410 parts In-Stock

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410

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AZTECH Wire

Italy . 11,792 parts In-Stock

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$5.250

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One Stop Electronics

USA . 752 parts In-Stock

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$22.050

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Kepictronics

USA . 306,000 parts In-Stock

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UNI Independent Distributors

Spain . 3,907 parts In-Stock

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Corphita

USA . 2,394 parts In-Stock

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Supply Digital

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Perfect Parts

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Overview

Elevate your designs with the PMR290UNE from NXP Semiconductors, a leader in innovative technology. This superior small signal FET combines exceptional switching efficiency with robust performance, making it ideal for consumer electronics and power management applications. Experience enhanced reliability and design flexibility, backed by NXP’s commitment to quality and excellence. Unleash the potential of your projects with this game-changing component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material is lightweight and durable, providing good protection against environmental factors, making it ideal for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility, resulting in better performance for switching applications, allowing for faster operation.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode configuration simplifies circuit design, providing protection against potential damage from reverse voltage conditions.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET offers efficient control of power and signaling in electronic circuits.

Surface Mount: YES

Surface mount technology allows for compact designs and ease of automated assembly, making this FET suitable for modern electronic devices.

Minimum DS Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, this FET can operate safely in circuits with moderate voltage levels, ensuring reliability.

Package Shape: RECTANGULAR

The rectangular shape optimizes space usage on PCBs, facilitating easier integration into various custom layouts.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics, ensuring secure and stable connections on printed circuit boards.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows the FET to provide high input impedance and efficient switching capabilities, making it suitable for low-power applications.

No. of Terminals: 3

The 3-terminal configuration is standard for FETs, allowing versatile applications in simple switching or amplification circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package is compact, making it ideal for space-constrained applications in smartphones, tablets, and other electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high stability and performance, enabling powerful functionality in digital and analog circuit designs.

Transistor Element Material: SILICON

Silicon is the most common semiconductor material, providing excellent electrical characteristics and cost-effectiveness for production.

Terminal Finish: PURE TIN

Pure tin offers good corrosion resistance, improving the longevity of the connections and overall device reliability.

Maximum Drain Current (ID): 0.7 A

A maximum drain current of 0.7 A allows the device to handle relatively high loads, making it suitable for various applications.

Maximum Drain-Source On Resistance: 0.38 ohm

Low on-resistance means minimal power loss during switching, increasing overall efficiency and reducing heat generation in the circuit.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layout options, improving design versatility in compact applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMR290UNE attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.7 A

Maximum Drain-Source On Resistance:

.38 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

PURE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMR290UNE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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