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JAN2N3823

New England Semiconductor

JAN2N3823 by New England Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Terminal Position: BOTTOM; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

$14.990

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

< 1k

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 25 parts In-Stock

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$11.946

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DF Sales Co.

USA . 25 parts In-Stock

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$11.946

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Freelance Electronics

USA . 1 parts In-Stock

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$14.959

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TEDSS.com

USA . 22 parts In-Stock

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$14.990

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Bristol Electronics

USA . 3 parts In-Stock

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Component Electronics Inc.

Canada . 21 parts In-Stock

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$21.540

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$16.150

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$14.000

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American Microsemiconductor Inc.

USA . 111 parts In-Stock

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$36.830

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Electronic Expediters

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R&J Components

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First Choice Components Inc.

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MISTER SPROCKETS

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Distributors (Availability)

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Supply Digital

USA . 2,448 parts In-Stock

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Perfect Parts

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) JAN2N3823 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from New England Semiconductor

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

2 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-206AF

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

MIL-19500/375

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

JAN2N3823 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-517-9415, 5961005179415, 5961-00-104-8426, 5961001048426

NIIN

005179415, 001048426

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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