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NE3509M04-T2B-A

Nec Electronics

NE3509M04-T2B-A by Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; JESD-30 Code: R-PDSO-F4; Terminal Form: FLAT;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

RF Small Signal Field Effect Transistors (FET) NE3509M04-T2B-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Nec Electronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

3 V

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

HETERO-JUNCTION

Highest Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

NE3509M04-T2B-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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