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2SK1122

Nec Electronics

2SK1122 by Nec Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT; Transistor Application: SWITCHING;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 711 parts In-Stock

1+ parts

$0.387

100+ parts

-

1k+ parts

-

10k+ parts

$0.372

711

$0.387

-

-

$0.372

Northwest PG Solutions

USA . 1,491 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

$0.375

1,491

$0.426

-

-

$0.375

Technical Specifications

Power Field Effect Transistors (FET) 2SK1122 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

40 A

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

160 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SK1122 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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