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NT5CC256M16CP-DIB

Nanya Technology

NT5CC256M16CP-DIB by Nanya Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

DRAM NT5CC256M16CP-DIB attributes and parameters. Explore more DRAM devices from Nanya Technology

Specs

Access Mode:

MULTI BANK PAGE BURST

Maximum Access Time:

.225 ns

Additional Features:

AUTO/SELF REFRESH

Maximum Clock Frequency (fCLK):

800 MHz

Input/Output Type:

COMMON

Interleaved Burst Length:

8

JESD-30 Code:

R-PBGA-B96

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

96

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX16

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA96,9X16,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

1.35

Qualification:

Not Qualified

Refresh Cycles:

Maximum Seated Height:

1.2 mm

Self Refresh:

YES

Sequential Burst Length:

8

Maximum Standby Current:

.016 Amp

Sub-Category:

DRAMs

Maximum Supply Current:

270 mA

Maximum Supply Voltage (Vsup):

1.45 V

Minimum Supply Voltage (Vsup):

1.283 V

Nominal Supply Voltage / Vsup (V):

1.35

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

9 mm

Trade Compliance

NT5CC256M16CP-DIB Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.36

SB

8542.32.00.23

Manufacturer Highlights

Nanya Technology

Nanya Technology holds innovation as our core value which is realized in the company’s dedication to research and develop, design, manufacture, marketing, and sales of Dynamic Random Access Memory (DRAM). Nanya’s commitment to research and development has enabled the company to accumulate extensive DRAM expertise and intellectual property. As a true leader in corporate citizenship, Nanya has proactively implemented green manufacturing technology. Nanya has harnessed the power of artificial intelligence (AI) to significantly upgrade production capacity and efficiency. The result is a company that provides industry leading DRAM solutions in a way that is environmentally friendly to our planet

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