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CM1000DXL-24S

Mitsubishi Electric

CM1000DXL-24S by Mitsubishi Electric

Mitsubishi Electric's CM1000DXL-24S IGBT offers 2.3V VCEsat, 7500W power dissipation, and 1200V VCE for high-power applications. Ideal for industrial motor drives, renewable energy systems, and electric vehicle inverters due to its 900A IC rating and 150°C operating temperature.

Median Price

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Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

< 1k

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 2,335 parts In-Stock

1+ parts

$168.750

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2,335

$168.750

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Infinite Electronics LLP (Excess)

. 303 parts In-Stock

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303

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Netroflash

USA . 50 parts In-Stock

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50

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Overview

Experience superior performance and reliability with the Mitsubishi Electric CM1000DXL-24S Insulated Gate Bipolar Transistor. As a trusted manufacturer in the industry, Mitsubishi Electric delivers unparalleled quality and innovation in their products. This IGBT offers a maximum VCEsat of 2.3V and a maximum power dissipation of 7500W, making it ideal for high-power applications. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 900A, this product ensures efficient operation even in demanding environments. Trust Mitsubishi Electric to provide you with the cutting-edge technology you need for your projects.

Feature Benefit Bullets

Maximum VCEsat: 2.3 V

Low VCEsat reduces power losses and improves efficiency in high power applications.

Maximum Power Dissipation (Abs): 7500 W

High power dissipation capability allows for reliable operation in demanding conditions.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures stability and performance under extreme conditions.

Maximum Collector-Emitter Voltage: 1200 V

Higher collector-emitter voltage rating provides versatility for various voltage requirements.

Maximum Gate-Emitter Voltage: 20 V

Low gate-emitter voltage allows for efficient control and switching of the transistor.

Maximum Collector Current (IC): 900 A

High collector current rating enables handling of large current loads with ease.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM1000DXL-24S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Maximum Power Dissipation (Abs):

Sub-Category:

Insulated Gate BIP Transistors

Maximum VCEsat:

2.3 V

Trade Compliance

CM1000DXL-24S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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